MMG15CB120XB6TC IGBT. Datasheet pdf. Equivalent
Type Designator: MMG15CB120XB6TC
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 27 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 22 nS
Qgⓘ - Total Gate Charge, typ: 105 nC
Package: MODULE
MMG15CB120XB6TC Transistor Equivalent Substitute - IGBT Cross-Reference Search
MMG15CB120XB6TC Datasheet (PDF)
mmg15cb120xb6tn.pdf
MMG15CB120XB6TN1200V 15A PIM ModuleFebruary 2017 Version 2 RoHS CompliantPRODUCT FEATURES Low saturation voltage and positive temperature coefficient Substrate for Low Thermal Resistance Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Solder Contact Technology, Rugged mounting due to integrated Mounting clamps
mmg15cb120xb6tc.pdf
MMG15CB120XB6TC1200V 15A PIM ModuleNovember 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Substrate for Low Thermal Resistance Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Solder Contact Technology, Rugged moun
mmg15cb120x6tc.pdf
MMG15CB120X6TC1200V 15A Six-Pack ModuleNovember 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Substrate for Low Thermal Resistance Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Solder Contact Technology, Rugged
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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