IRG4ZH71KD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4ZH71KD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 350 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 78 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.89 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 45 nS
Coesⓘ - Capacitancia de salida, typ: 400 pF
Qgⓘ - Carga total de la puerta, typ: 380 nC
Paquete / Cubierta: SMD10
Búsqueda de reemplazo de IRG4ZH71KD - IGBT
IRG4ZH71KD Datasheet (PDF)
irg4zh71kd.pdf
PD - 91729PRELIMINARYIRG4ZH71KD Surface MountableINSULATED GATE BIPOLAR TRANSISTOR WITHShort Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeatures High short circuit rating optimized for motorCn-channel control, tsc =10s, VCC = 720V , TJ = 125C,VCES = 1200V VGE = 15V IGBT co-packaged with HEXFRED ultrafast,VCE(ON)typ = 2.89V ultra-soft-
irg4zh70ud.pdf
PD - 9.1627AIRG4ZH70UDINSULATED GATE BIPOLAR TRANSISTOR WITH Surface MountableULTRAFAST SOFT RECOVERY DIODEUltraFast CoPack IGBTFeaturesCn-channel UltraFast IGBT optimized for high switching frequenciesVCES = 1200V IGBT co-packaged with HEXFRED ultrafast,ultra-soft recovery antiparallel diodes for use inbridge configurations VCE(ON)typ = 2.23V Low Gate ChargeG
irg4zh50kd.pdf
PD - 9.1680IRG4ZH50KD Surface Mountable ShortINSULATED GATE BIPOLAR TRANSISTOR WITHCircuit Rated UltraFast IGBTULTRAFAST SOFT RECOVERY DIODEFeaturesCn-channel High short circuit rating optimized for motor control, tsc = 10s,VCES = 1200VVCC = 720V, TJ = 125C, VGE = 15V IGBT co-packaged with HEXFREDTM ultrafast, ultra-softVCE(ON)typ = 2.79Vrecovery antiparallel dio
irg4zc70ud.pdf
PD -9.1668AIRG4ZC70UDINSULATED GATE BIPOLAR TRANSISTOR WITH Surface MountableULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTFeaturesCn-channel UltraFast IGBT optimized for high switching frequenciesVCES = 600V IGBT co-packaged with HEXFRED ultrafast,ultra-soft recovery antiparallel diodes for use inbridge configurationsVCE(ON)typ = 1.5V Low gate chargeG Low
irg4zc71kd.pdf
PD - 91723PRELIMINARYIRG4ZC71KD Surface MountableINSULATED GATE BIPOLAR TRANSISTOR WITHShort Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeatures High short circuit rating optimized for motorCn-channel control, tsc =10s, VCC = 360V , TJ = 125C,VCES = 600V VGE = 15V IGBT co-packaged with HEXFRED ultrafast,VCE(ON)typ = 1.75V ultra-soft-r
Otros transistores... IRG4RC10S , IRG4RC10SD , IRG4RC10U , IRG4RC10UD , IRG4ZC70UD , IRG4ZC71KD , IRG4ZH50KD , IRG4ZH70UD , TGAN20N135FD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , IRGS14C40L , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 .
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