All IGBT. IRG4ZH71KD Datasheet

 

IRG4ZH71KD IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4ZH71KD
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 78 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.89 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 400 pF
   Package: SMD10

 IRG4ZH71KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4ZH71KD Datasheet (PDF)

 ..1. Size:234K  international rectifier
irg4zh71kd.pdf

IRG4ZH71KD
IRG4ZH71KD

PD - 91729PRELIMINARYIRG4ZH71KD Surface MountableINSULATED GATE BIPOLAR TRANSISTOR WITHShort Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeatures High short circuit rating optimized for motorCn-channel control, tsc =10s, VCC = 720V , TJ = 125C,VCES = 1200V VGE = 15V IGBT co-packaged with HEXFRED ultrafast,VCE(ON)typ = 2.89V ultra-soft-

 7.1. Size:233K  international rectifier
irg4zh70ud.pdf

IRG4ZH71KD
IRG4ZH71KD

PD - 9.1627AIRG4ZH70UDINSULATED GATE BIPOLAR TRANSISTOR WITH Surface MountableULTRAFAST SOFT RECOVERY DIODEUltraFast CoPack IGBTFeaturesCn-channel UltraFast IGBT optimized for high switching frequenciesVCES = 1200V IGBT co-packaged with HEXFRED ultrafast,ultra-soft recovery antiparallel diodes for use inbridge configurations VCE(ON)typ = 2.23V Low Gate ChargeG

 8.1. Size:243K  international rectifier
irg4zh50kd.pdf

IRG4ZH71KD
IRG4ZH71KD

PD - 9.1680IRG4ZH50KD Surface Mountable ShortINSULATED GATE BIPOLAR TRANSISTOR WITHCircuit Rated UltraFast IGBTULTRAFAST SOFT RECOVERY DIODEFeaturesCn-channel High short circuit rating optimized for motor control, tsc = 10s,VCES = 1200VVCC = 720V, TJ = 125C, VGE = 15V IGBT co-packaged with HEXFREDTM ultrafast, ultra-softVCE(ON)typ = 2.79Vrecovery antiparallel dio

 9.1. Size:218K  international rectifier
irg4zc70ud.pdf

IRG4ZH71KD
IRG4ZH71KD

PD -9.1668AIRG4ZC70UDINSULATED GATE BIPOLAR TRANSISTOR WITH Surface MountableULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTFeaturesCn-channel UltraFast IGBT optimized for high switching frequenciesVCES = 600V IGBT co-packaged with HEXFRED ultrafast,ultra-soft recovery antiparallel diodes for use inbridge configurationsVCE(ON)typ = 1.5V Low gate chargeG Low

 9.2. Size:224K  international rectifier
irg4zc71kd.pdf

IRG4ZH71KD
IRG4ZH71KD

PD - 91723PRELIMINARYIRG4ZC71KD Surface MountableINSULATED GATE BIPOLAR TRANSISTOR WITHShort Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeatures High short circuit rating optimized for motorCn-channel control, tsc =10s, VCC = 360V , TJ = 125C,VCES = 600V VGE = 15V IGBT co-packaged with HEXFRED ultrafast,VCE(ON)typ = 1.75V ultra-soft-r

Datasheet: IRG4RC10S , IRG4RC10SD , IRG4RC10U , IRG4RC10UD , IRG4ZC70UD , IRG4ZC71KD , IRG4ZH50KD , IRG4ZH70UD , TGAN20N135FD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , IRGS14C40L , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 .

 

 
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