IRGBC20S Todos los transistores

Introduzca al menos 3 números o letras

IRGBC20S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGBC20S

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg): 10V

Corriente del colector DC máxima (Ic): 19A

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220AB

Búsqueda de reemplazo de IRGBC20S - IGBT

 

IRGBC20S Datasheet (PDF)

1.1. irgbc20s.pdf Size:97K _international_rectifier

IRGBC20S
IRGBC20S

IGBT Designers Manual Data Sheets The IGBT devices listed in this Designers Manual represent International Rectifiers IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Opti

1.2. irgbc20sd2.pdf Size:268K _international_rectifier

IRGBC20S
IRGBC20S

PD-9.1544 IRGBC20SD2 P O O Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Switching-loss rating includes all 'tail' losses ? VCE( ) ? ? 2.4V ? ? SAT HEXFREDTM soft ultrafast diodes G Optimized for line frequency operation (to 400HZ) @VGE = 15V, IC = 10A E Description n-channel Co-packaged IGBTs are a

3.1. irgbc20fd2.pdf Size:85K _international_rectifier

IRGBC20S

IRGBC20FD2 90% Vge +Vge Vce Same type device as D.U.T. 90% Ic 10% Vce Ic Ic 5% Ic 430F 80% td(off) tf of Vce D.U.T. t1+5S Eoff = Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr trr GATE VOLTAGE D.U.T. Qrr = id dt

3.2. irgbc20u.pdf Size:102K _international_rectifier

IRGBC20S
IRGBC20S

PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 6.5A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have hi

3.3. irgbc20kd2-s.pdf Size:152K _international_rectifier

IRGBC20S
IRGBC20S

PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT C .A=JKHAI Short circuit rated -10s @125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) ? 3.5V Optimized for high operating frequency (over 5kHz) G See Fig. 1 for Current vs

3.4. irgbc20m-s.pdf Size:105K _international_rectifier

IRGBC20S
IRGBC20S

PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10s @ 125C, V = 15V GE VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 2.3V G @VGE = 15V, IC = 8.0A E n-channel Description Insulate

3.5. irgbc20k-s.pdf Size:113K _international_rectifier

IRGBC20S
IRGBC20S

PD - 9.1130 IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT .A=JKHAI C Short circuit rated - 10s @ 125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) ? 3.5V G curve @VGE = 15V, IC = 6.0A E n-channel Description Insu

3.6. irgbc20k.pdf Size:101K _international_rectifier

IRGBC20S
IRGBC20S

PD - 9.1128 IRGBC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features C Short circuit rated - 10s @ 125C, V = 15V GE VCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.5V G @VGE = 15V, IC = 6.0A E n-channel Description Insulated

3.7. irgbc20f.pdf Size:98K _international_rectifier

IRGBC20S
IRGBC20S

PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 2.8V G @VGE = 15V, IC = 9.0A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier hav

3.8. irgbc20ud2.pdf Size:206K _international_rectifier

IRGBC20S
IRGBC20S

PD - 9.790 IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 6.5A E n-channel Description C

3.9. irgbc20m.pdf Size:97K _international_rectifier

IRGBC20S
IRGBC20S

PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10s @ 125C, V = 15V GE VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 2.5V G @VGE = 15V, IC = 8.0A E n-channel Description Insulated G

3.10. irgbc20kd2.pdf Size:206K _international_rectifier

IRGBC20S
IRGBC20S

PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V Short circuit rated -10s @125C, V = 15V GE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) ? 3.5V Optimized for high operating frequency (over 5kHz) G See Fig. 1 for Current

3.11. irgbc20md2-s.pdf Size:208K _international_rectifier

IRGBC20S
IRGBC20S

PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT C Features Short circuit rated -10s @125C, V = 15V VCES = 600V GE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) ? 2.5V Optimized for medium operating frequency ( 1 to G 10kHz) See Fig. 1 for Current

3.12. irgbc20md2.pdf Size:200K _international_rectifier

IRGBC20S
IRGBC20S

PD - 9.1106 IRGBC20MD2 INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated WITH ULTRAFAST SOFT RECOVERY Fast Copack IGBT DIODE Features C VCES = 600V Short circuit rated -10s @125C, V = 15V GE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) ? 2.5V Optimized for medium operating frequency (1 to G 10kHz) See Fig. 1 for Current v

Otros transistores... IRG4RC10SD , IRG4RC10U , IRG4RC10UD , IRG4ZC70UD , IRG4ZC71KD , IRG4ZH50KD , IRG4ZH70UD , IRG4ZH71KD , GT30J322 , IRGBC30S , IRGBC40S , IRGS14B40L , IRGS14C40L , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 .

 


IRGBC20S
  IRGBC20S
  IRGBC20S
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


Introduzca al menos 1 números o letras