IRGBC20S Todos los transistores

 ..1. Size:97K  international rectifier
 irgbc20s.pdf

IGBT Designer s Manual Data Sheets The IGBT devices listed in this Designer s Manual represent International Rectifier s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 6

 0.1. Size:268K  international rectifier
 irgbc20sd2.pdf

PD-9.1544 IRGBC20SD2 P O O Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Switching-loss rating includes all 'tail' losses VCE( ) 2.4V SAT HEXFREDTM soft ultrafast diodes G Optimized for line frequency operation (to 400HZ) @VGE = 15V, IC = 10A E Description n-channel Co-pa

 7.1. Size:98K  international rectifier
 irgbc20f.pdf

PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.8V G @VGE = 15V, IC = 9.0A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rect

 7.2. Size:85K  international rectifier
 irgbc20fd2.pdf

IRGBC20FD2 90% Vge +Vge Vce Same type device as D.U.T. 90% Ic 10% Vce Ic Ic 5% Ic 430 F 80% td(off) tf of Vce D.U.T. t1+5 S Eoff = Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr trr GATE VOLTAGE D.U.T. Qrr = i

 7.3. Size:206K  international rectifier
 irgbc20kd2.pdf

PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V Short circuit rated -10 s @125 C, V = 15V GE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) 3.5V Optimized for high operating frequency (over 5kHz) G See Fig.

 7.4. Size:101K  international rectifier
 irgbc20k.pdf

PD - 9.1128 IRGBC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features C Short circuit rated - 10 s @ 125 C, V = 15V GE VCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.5V G @VGE = 15V, IC = 6.0A E n-channel Descriptio

 7.5. Size:113K  international rectifier
 irgbc20k-s.pdf

PD - 9.1130 IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT .A=JKHAI C Short circuit rated - 10 s @ 125 C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.5V G curve @VGE = 15V, IC = 6.0A E n-channel Desc

 7.6. Size:208K  international rectifier
 irgbc20md2-s.pdf

PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT C Features Short circuit rated -10 s @125 C, V = 15V VCES = 600V GE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) 2.5V Optimized for medium operating frequency ( 1 to G 10kHz) See Fig.

 7.7. Size:105K  international rectifier
 irgbc20m-s.pdf

PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10 s @ 125 C, V = 15V GE VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.3V G @VGE = 15V, IC = 8.0A E n-channel Descript

 7.8. Size:200K  international rectifier
 irgbc20md2.pdf

PD - 9.1106 IRGBC20MD2 INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated WITH ULTRAFAST SOFT RECOVERY Fast Copack IGBT DIODE Features C VCES = 600V Short circuit rated -10 s @125 C, V = 15V GE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) 2.5V Optimized for medium operating frequency (1 to G 10kHz) See Fig.

 7.9. Size:152K  international rectifier
 irgbc20kd2-s.pdf

PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT C .A=JKHAI Short circuit rated -10 s @125 C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) 3.5V Optimized for high operating frequency (over 5kHz) G See Fig. 1

 7.10. Size:102K  international rectifier
 irgbc20u.pdf

PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.0V G @VGE = 15V, IC = 6.5A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier

 7.11. Size:206K  international rectifier
 irgbc20ud2.pdf

PD - 9.790 IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) VCE(sat) 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 6.5A E n-channel Des

 7.12. Size:97K  international rectifier
 irgbc20m.pdf

PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10 s @ 125 C, V = 15V GE VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.5V G @VGE = 15V, IC = 8.0A E n-channel Description