IRGBC20S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IGBT Designers ManualData SheetsThe IGBT devices listed in this DesignersManual represent International RectifiersIGBT line as of August, 1994. The datapresented in this manual supersedes allprevious specifications.C-2PD - 9.687AIRGBC20SINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 6

PD-9.1544IRGBC20SD2P O O Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Switching-loss rating includes all 'tail' lossesVCE( ) 2.4VSAT HEXFREDTM soft ultrafast diodesG Optimized for line frequency operation (to 400HZ)@VGE = 15V, IC = 10AEDescriptionn-channelCo-pa

PD - 9.686AIRGBC20FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 2.8VG@VGE = 15V, IC = 9.0AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rect

IRGBC20FD290% Vge+VgeVceSame typedevice asD.U.T.90% Ic10% VceIcIc5% Ic430F80%td(off) tfof VceD.U.T.t1+5SEoff = Vce ic dtt1Fig. 18a - Test Circuit for Measurement ofILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningEoff, td(off), tftrrtrrGATE VOLTAGE D.U.T.Qrr = i

PD - 9.1105IRGBC20KD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTFeaturesCVCES = 600V Short circuit rated -10s @125C, V = 15VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 3.5V Optimized for high operating frequency (over 5kHz)G See Fig.

PD - 9.1128IRGBC20KINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz)See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.5VG@VGE = 15V, IC = 6.0AEn-channelDescriptio

PD - 9.1130IRGBC20K-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast Fast IGBT.A=JKHAIC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.5VGcurve@VGE = 15V, IC = 6.0AEn-channelDesc

PD - 9.1141IRGBC20MD2-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBTCFeatures Short circuit rated -10s @125C, V = 15V VCES = 600VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 2.5V Optimized for medium operating frequency ( 1 toG 10kHz) See Fig.

PD - 9.1131AIRGBC20M-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.3VG@VGE = 15V, IC = 8.0AEn-channelDescript

PD - 9.1106IRGBC20MD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY Fast Copack IGBTDIODEFeaturesCVCES = 600V Short circuit rated -10s @125C, V = 15VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 2.5V Optimized for medium operating frequency (1 toG 10kHz) See Fig.

PD - 9.1125IRGBC20KD2-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTC.A=JKHAI Short circuit rated -10s @125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 3.5V Optimized for high operating frequency (over 5kHz)G See Fig. 1

PD - 9.681AIRGBC20UINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 3.0VG@VGE = 15V, IC = 6.5AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectifier

PD - 9.790IRGBC20UD2INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBTWITH ULTRAFAST SOFT RECOVERY DIODEFeaturesCVCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz)VCE(sat) 3.0V See Fig. 1 for Current vs. Frequency curveG@VGE = 15V, IC = 6.5AEn-channelDes

PD - 9.1127IRGBC20MINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.5VG@VGE = 15V, IC = 8.0AEn-channelDescription