IGBT Designers ManualData SheetsThe IGBT devices listed in this DesignersManual represent International RectifiersIGBT line as of August, 1994. The datapresented in this manual supersedes allprevious specifications.C-2PD - 9.687AIRGBC20SINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 6

PD-9.1544IRGBC20SD2P O O Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Switching-loss rating includes all 'tail' lossesVCE( ) 2.4VSAT HEXFREDTM soft ultrafast diodesG Optimized for line frequency operation (to 400HZ)@VGE = 15V, IC = 10AEDescriptionn-channelCo-pa

PD - 9.686AIRGBC20FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 2.8VG@VGE = 15V, IC = 9.0AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rect

IRGBC20FD290% Vge+VgeVceSame typedevice asD.U.T.90% Ic10% VceIcIc5% Ic430F80%td(off) tfof VceD.U.T.t1+5SEoff = Vce ic dtt1Fig. 18a - Test Circuit for Measurement ofILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningEoff, td(off), tftrrtrrGATE VOLTAGE D.U.T.Qrr = i

PD - 9.1105IRGBC20KD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTFeaturesCVCES = 600V Short circuit rated -10s @125C, V = 15VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 3.5V Optimized for high operating frequency (over 5kHz)G See Fig.

PD - 9.1128IRGBC20KINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz)See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.5VG@VGE = 15V, IC = 6.0AEn-channelDescriptio

PD - 9.1130IRGBC20K-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast Fast IGBT.A=JKHAIC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.5VGcurve@VGE = 15V, IC = 6.0AEn-channelDesc

PD - 9.1141IRGBC20MD2-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBTCFeatures Short circuit rated -10s @125C, V = 15V VCES = 600VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 2.5V Optimized for medium operating frequency ( 1 toG 10kHz) See Fig.

PD - 9.1131AIRGBC20M-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.3VG@VGE = 15V, IC = 8.0AEn-channelDescript

PD - 9.1106IRGBC20MD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY Fast Copack IGBTDIODEFeaturesCVCES = 600V Short circuit rated -10s @125C, V = 15VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 2.5V Optimized for medium operating frequency (1 toG 10kHz) See Fig.

PD - 9.1125IRGBC20KD2-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTC.A=JKHAI Short circuit rated -10s @125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 3.5V Optimized for high operating frequency (over 5kHz)G See Fig. 1

PD - 9.681AIRGBC20UINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 3.0VG@VGE = 15V, IC = 6.5AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectifier

PD - 9.790IRGBC20UD2INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBTWITH ULTRAFAST SOFT RECOVERY DIODEFeaturesCVCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz)VCE(sat) 3.0V See Fig. 1 for Current vs. Frequency curveG@VGE = 15V, IC = 6.5AEn-channelDes

PD - 9.1127IRGBC20MINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.5VG@VGE = 15V, IC = 8.0AEn-channelDescription