IRGBC30S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 9.688AIRGBC30SINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency CurveVCE(sat) 2.2VG@VGE = 15V, IC = 18AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rect

PD - 9.1072IRGBC30MINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.9VG@VGE = 15V, IC = 16AEn-channelDescription

PD - 9.1107IRGBC30KD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTFeaturesC Short circuit rated -10s @125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 3.8V Optimized for high operating frequency (over 5kHz)G See Fig. 1 f

PD - 9.1071IRGBC30KINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.8VG@VGE = 15V, IC = 14AEn-channelDescriptio

PD - 9.682AIRGBC30UINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 3.0VG@VGE = 15V, IC = 12AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectifier

PD - 9.796AIRGBC30UD2INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBTWITH ULTRAFAST SOFT RECOVERY DIODEFeaturesCVCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz)VCE(sat) 3.0VSee Fig. 1 for Current vs. Frequency curveG@VGE = 15V, IC = 12AEn-channelDesc

PD - 9.689AIRGBC30FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 2.1VG@VGE = 15V, IC = 17AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Recti

PD - 9.1132IRGBC30K-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast Fast IGBTFeaturesC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.8VG@VGE = 15V, IC = 14AEn-channelDescr

PD - 9.1143IRGBC30MD2-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBTCFeatures Short circuit rated -10s @125C, V = 15V VCES = 600VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 2.9V Optimized for medium operating frequency ( 1 toG 10kHz) See Fig.

PD - 9.794IRGBC30FD2INSULATED GATE BIPOLAR TRANSISTOR Fast CoPack IGBTWITH ULTRAFAST SOFT RECOVERYDIODEFeaturesCVCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for medium operating frequency (1 toVCE(sat) 2.1V 10kHz) See Fig. 1 for Current vs. Frequency curveG@VGE = 15V, IC = 31AEn-channelDescr

PD - 9.1142IRGBC30KD2-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTC.A=JKHAI Short circuit rated -10s @125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 3.8V Optimized for high operating frequency (over 5kHz)G See Fig. 1

PD - 9.1133IRGBC30M-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated FastIGBTFeaturesC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.9VG@VGE = 15V, IC = 16AEn-channelDescription

PD - 9.1108IRGBC30MD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY Fast Copack IGBTDIODEFeaturesCVCES = 600V Short circuit rated -10s @125C, V = 15VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 2.9V Optimized for medium operating frequency (1 toG 10kHz) See Fig.