IRGBC30S - аналоги и описание IGBT

PD - 9.688A IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency Curve VCE(sat) 2.2V G @VGE = 15V, IC = 18A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rect

PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10 s @ 125 C, V = 15V GE VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.9V G @VGE = 15V, IC = 16A E n-channel Description

PD - 9.1107 IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C Short circuit rated -10 s @125 C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) 3.8V Optimized for high operating frequency (over 5kHz) G See Fig. 1 f

PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features C Short circuit rated - 10 s @ 125 C, V = 15V GE VCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.8V G @VGE = 15V, IC = 14A E n-channel Descriptio

PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.0V G @VGE = 15V, IC = 12A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier

PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) VCE(sat) 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 12A E n-channel Desc

PD - 9.689A IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.1V G @VGE = 15V, IC = 17A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Recti

PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT Features C Short circuit rated - 10 s @ 125 C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.8V G @VGE = 15V, IC = 14A E n-channel Descr

PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT C Features Short circuit rated -10 s @125 C, V = 15V VCES = 600V GE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) 2.9V Optimized for medium operating frequency ( 1 to G 10kHz) See Fig.

PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR Fast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for medium operating frequency (1 to VCE(sat) 2.1V 10kHz) See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 31A E n-channel Descr

PD - 9.1142 IRGBC30KD2-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT C .A=JKHAI Short circuit rated -10 s @125 C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) 3.8V Optimized for high operating frequency (over 5kHz) G See Fig. 1

PD - 9.1133 IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10 s @ 125 C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.9V G @VGE = 15V, IC = 16A E n-channel Description

PD - 9.1108 IRGBC30MD2 INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated WITH ULTRAFAST SOFT RECOVERY Fast Copack IGBT DIODE Features C VCES = 600V Short circuit rated -10 s @125 C, V = 15V GE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) 2.9V Optimized for medium operating frequency (1 to G 10kHz) See Fig.