Справочник IGBT. IRGBC30S

 

IRGBC30S Даташит. Аналоги. Параметры и характеристики.


   Наименование: IRGBC30S
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 34 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 32 nS
   Coesⓘ - Выходная емкость, типовая: 70 pF
   Qgⓘ - Общий заряд затвора, typ: 28 nC
   Тип корпуса: TO220AB
     - подбор IGBT транзистора по параметрам

 

IRGBC30S Datasheet (PDF)

 ..1. Size:102K  international rectifier
irgbc30s.pdfpdf_icon

IRGBC30S

PD - 9.688AIRGBC30SINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency CurveVCE(sat) 2.2VG@VGE = 15V, IC = 18AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rect

 7.1. Size:98K  international rectifier
irgbc30m.pdfpdf_icon

IRGBC30S

PD - 9.1072IRGBC30MINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.9VG@VGE = 15V, IC = 16AEn-channelDescription

 7.2. Size:142K  international rectifier
irgbc30kd2.pdfpdf_icon

IRGBC30S

PD - 9.1107IRGBC30KD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTFeaturesC Short circuit rated -10s @125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 3.8V Optimized for high operating frequency (over 5kHz)G See Fig. 1 f

 7.3. Size:99K  international rectifier
irgbc30k.pdfpdf_icon

IRGBC30S

PD - 9.1071IRGBC30KINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.8VG@VGE = 15V, IC = 14AEn-channelDescriptio

Другие IGBT... IRG4RC10U , IRG4RC10UD , IRG4ZC70UD , IRG4ZC71KD , IRG4ZH50KD , IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , RJH60F5DPQ-A0 , IRGBC40S , IRGS14B40L , IRGS14C40L , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 .

History: MWI60-12T6K | IXGA12N120A3 | APT100GN120B2G

 

 
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