Справочник IGBT. IRGBC30S

 

IRGBC30S - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IRGBC30S
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 34 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 32 nS
   Coesⓘ - Выходная емкость, типовая: 70 pF
   Тип корпуса: TO220AB

 Аналог (замена) для IRGBC30S

 

 

IRGBC30S Datasheet (PDF)

 ..1. Size:102K  international rectifier
irgbc30s.pdf

IRGBC30S
IRGBC30S

PD - 9.688AIRGBC30SINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency CurveVCE(sat) 2.2VG@VGE = 15V, IC = 18AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rect

 7.1. Size:98K  international rectifier
irgbc30m.pdf

IRGBC30S
IRGBC30S

PD - 9.1072IRGBC30MINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.9VG@VGE = 15V, IC = 16AEn-channelDescription

 7.2. Size:142K  international rectifier
irgbc30kd2.pdf

IRGBC30S
IRGBC30S

PD - 9.1107IRGBC30KD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTFeaturesC Short circuit rated -10s @125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 3.8V Optimized for high operating frequency (over 5kHz)G See Fig. 1 f

 7.3. Size:99K  international rectifier
irgbc30k.pdf

IRGBC30S
IRGBC30S

PD - 9.1071IRGBC30KINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.8VG@VGE = 15V, IC = 14AEn-channelDescriptio

 7.4. Size:96K  international rectifier
irgbc30u.pdf

IRGBC30S
IRGBC30S

PD - 9.682AIRGBC30UINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 3.0VG@VGE = 15V, IC = 12AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectifier

 7.5. Size:198K  international rectifier
irgbc30ud2.pdf

IRGBC30S
IRGBC30S

PD - 9.796AIRGBC30UD2INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBTWITH ULTRAFAST SOFT RECOVERY DIODEFeaturesCVCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz)VCE(sat) 3.0VSee Fig. 1 for Current vs. Frequency curveG@VGE = 15V, IC = 12AEn-channelDesc

 7.6. Size:98K  international rectifier
irgbc30f.pdf

IRGBC30S
IRGBC30S

PD - 9.689AIRGBC30FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 2.1VG@VGE = 15V, IC = 17AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Recti

 7.7. Size:116K  international rectifier
irgbc30k-s.pdf

IRGBC30S
IRGBC30S

PD - 9.1132IRGBC30K-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast Fast IGBTFeaturesC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.8VG@VGE = 15V, IC = 14AEn-channelDescr

 7.8. Size:212K  international rectifier
irgbc30md2-s.pdf

IRGBC30S
IRGBC30S

PD - 9.1143IRGBC30MD2-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBTCFeatures Short circuit rated -10s @125C, V = 15V VCES = 600VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 2.9V Optimized for medium operating frequency ( 1 toG 10kHz) See Fig.

 7.9. Size:197K  international rectifier
irgbc30fd2.pdf

IRGBC30S
IRGBC30S

PD - 9.794IRGBC30FD2INSULATED GATE BIPOLAR TRANSISTOR Fast CoPack IGBTWITH ULTRAFAST SOFT RECOVERYDIODEFeaturesCVCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for medium operating frequency (1 toVCE(sat) 2.1V 10kHz) See Fig. 1 for Current vs. Frequency curveG@VGE = 15V, IC = 31AEn-channelDescr

 7.10. Size:152K  international rectifier
irgbc30kd2-s.pdf

IRGBC30S
IRGBC30S

PD - 9.1142IRGBC30KD2-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTC.A=JKHAI Short circuit rated -10s @125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 3.8V Optimized for high operating frequency (over 5kHz)G See Fig. 1

 7.11. Size:116K  international rectifier
irgbc30m-s.pdf

IRGBC30S
IRGBC30S

PD - 9.1133IRGBC30M-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated FastIGBTFeaturesC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.9VG@VGE = 15V, IC = 16AEn-channelDescription

 7.12. Size:203K  international rectifier
irgbc30md2.pdf

IRGBC30S
IRGBC30S

PD - 9.1108IRGBC30MD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY Fast Copack IGBTDIODEFeaturesCVCES = 600V Short circuit rated -10s @125C, V = 15VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 2.9V Optimized for medium operating frequency (1 toG 10kHz) See Fig.

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