MMG600WB170B6E4N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG600WB170B6E4N
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 3750 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 960 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 70 nS
Paquete / Cubierta: MODULE
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MMG600WB170B6E4N Datasheet (PDF)
mmg600wb170b6en.pdf
MMG600WB170B6EN1700V 600A IGBT ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS
mmg600wb170b6e4n.pdf
MMG600WB170B6E4N1700V 600A IGBT ModuleMarch 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT4 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS
mmg600wb170b.pdf
MMG600WB170B1700V 600A IGBT ModuleFebruary 2016 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(Highly rugged SPT+ design) VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLI
Otros transistores... MMG600WB060DAK6EN , MMG600WB065B6EN , MMG600WB065B6TC , MMG600WB065TLA6EN , MMG600WB065TLB6EN , MMG600WB120B6E4N , MMG600WB120B6TC , MMG600WB170B , RJP63F3DPP-M0 , MMG600WB170B6EN , MMG600WE120B6E4N , MMG75H060XB6EN , MMG75H120X6TC , MMG75HB060B6EN , MMG75J120U6TC , MMG75J120U6TN , MMG75J120UZ6TC .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2