MMG600WB170B6EN IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG600WB170B6EN

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 3570 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 880 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 100 nS

Encapsulados: MODULE

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MMG600WB170B6EN datasheet

 0.1. Size:404K  macmic
 mmg600wb170b6en.pdf pdf_icon

MMG600WB170B6EN

MMG600WB170B6EN 1700V 600A IGBT Module September 2015 Version 0 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLICATIONS

 0.2. Size:241K  macmic
 mmg600wb170b6e4n.pdf pdf_icon

MMG600WB170B6EN

MMG600WB170B6E4N 1700V 600A IGBT Module March 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT4 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLICATIONS

 2.1. Size:1858K  macmic
 mmg600wb170b.pdf pdf_icon

MMG600WB170B6EN

MMG600WB170B 1700V 600A IGBT Module February 2016 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(Highly rugged SPT+ design) VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLI

MOSTRAR MÁS

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