Справочник IGBT. MMG600WB170B6EN

 

MMG600WB170B6EN - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MMG600WB170B6EN
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 3570 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1700 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 880 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 100 nS
   Тип корпуса: MODULE

 Аналог (замена) для MMG600WB170B6EN

 

 

MMG600WB170B6EN Datasheet (PDF)

 0.1. Size:404K  macmic
 mmg600wb170b6en.pdf

MMG600WB170B6EN MMG600WB170B6EN

MMG600WB170B6EN1700V 600A IGBT ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS

 0.2. Size:241K  macmic
 mmg600wb170b6e4n.pdf

MMG600WB170B6EN MMG600WB170B6EN

MMG600WB170B6E4N1700V 600A IGBT ModuleMarch 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT4 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS

 2.1. Size:1858K  macmic
 mmg600wb170b.pdf

MMG600WB170B6EN MMG600WB170B6EN

MMG600WB170B1700V 600A IGBT ModuleFebruary 2016 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(Highly rugged SPT+ design) VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLI

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