MMG75WD120XB6T4N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG75WD120XB6T4N

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 385

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 1.85

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 108

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 30

Empaquetado / Estuche: MODULE

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MMG75WD120XB6T4N Datasheet (PDF)

0.1. mmg75wd120xb6t4n.pdf Size:1571K _macmic

MMG75WD120XB6T4N1200V 75A PIM ModuleMay 2016 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration CHIP(Trench+Field Stop IGBT4 and EmCon4 diode) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copp

0.2. mmg75wd120xb6tc.pdf Size:291K _macmic

MMG75WD120XB6TC1200V 75A PIM ModuleAugust 2018 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper bas

 3.1. mmg75wd120xt6tc.pdf Size:1512K _macmic

MMG75WD120XT6TC1200V 75A Rectifier+Inverter ModuleApril 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insul

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