MMG75WD120XB6T4N Datasheet and Replacement
Type Designator: MMG75WD120XB6T4N
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 385 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 108 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 30 nS
Package: MODULE
- IGBT Cross-Reference
MMG75WD120XB6T4N Datasheet (PDF)
mmg75wd120xb6tc.pdf

MMG75WD120XB6TC1200V 75A PIM ModuleAugust 2018 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper bas
mmg75wd120xb6t4n.pdf

MMG75WD120XB6T4N1200V 75A PIM ModuleMay 2016 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration CHIP(Trench+Field Stop IGBT4 and EmCon4 diode) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copp
mmg75wd120xt6tc.pdf

MMG75WD120XT6TC1200V 75A Rectifier+Inverter ModuleApril 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insul
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MMG75J120U6HN | 2SH29
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History: MMG75J120U6HN | 2SH29



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