MMG800D060B6EN Todos los transistores

 

MMG800D060B6EN IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG800D060B6EN

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 2100 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1000 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃

trⓘ - Tiempo de subida, typ: 70 nS

Encapsulados: MODULE

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MMG800D060B6EN datasheet

 ..1. Size:240K  macmic
mmg800d060b6en.pdf pdf_icon

MMG800D060B6EN

MMG800D060B6EN 600V 800A IGBT Module January 2013 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS GD Series Module High f

 8.1. Size:171K  macmic
mmg800k060u6en.pdf pdf_icon

MMG800D060B6EN

MMG800K060U6EN 600V 800A IGBT Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 8.2. Size:445K  macmic
mmg800k120u6hn.pdf pdf_icon

MMG800D060B6EN

MMG800K120U6HN 1200V 800A IGBT Module June 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching los

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