Справочник IGBT. MMG800D060B6EN

 

MMG800D060B6EN - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MMG800D060B6EN
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 2100 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 1000 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 70 nS
   Тип корпуса: MODULE

 Аналог (замена) для MMG800D060B6EN

 

 

MMG800D060B6EN Datasheet (PDF)

 ..1. Size:240K  macmic
mmg800d060b6en.pdf

MMG800D060B6EN
MMG800D060B6EN

MMG800D060B6EN 600V 800A IGBT Module January 2013 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS GD Series Module High f

 8.1. Size:171K  macmic
mmg800k060u6en.pdf

MMG800D060B6EN
MMG800D060B6EN

MMG800K060U6EN600V 800A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 8.2. Size:445K  macmic
mmg800k120u6hn.pdf

MMG800D060B6EN
MMG800D060B6EN

MMG800K120U6HN1200V 800A IGBT ModuleJune 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching los

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