MMGT25H120XB6C Todos los transistores

 

MMGT25H120XB6C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMGT25H120XB6C
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 192 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 35 nS
   Paquete / Cubierta: MODULE
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MMGT25H120XB6C Datasheet (PDF)

 ..1. Size:162K  macmic
 mmgt25h120xb6c.pdf pdf_icon

MMGT25H120XB6C

MMGT25H120XB6C1200V 25A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba

 9.1. Size:1334K  macmic
 mmgt200q120b6c.pdf pdf_icon

MMGT25H120XB6C

MMGT200Q120B6C1200V 200A IGBT ModuleJune 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP

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History: IGZ50N65H5 | VS-ETF075Y60U | GA600GD25S | NCE20TD60BF | MMG150CE065PD6TC | IXGP30N60C3D4 | NCE40TD120BT

 

 
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