MMGT25H120XB6C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMGT25H120XB6C
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 192
Tensión colector-emisor (Vce): 1200
Voltaje de saturación colector-emisor (Vce sat): 1.85
Tensión emisor-compuerta (Veg): 20
Corriente del colector DC máxima (Ic): 40
Temperatura operativa máxima (Tj), °C: 175
Paquete / Caja (carcasa): MODULE
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MMGT25H120XB6C Datasheet (PDF)
..1. mmgt25h120xb6c.pdf Size:162K _macmic
MMGT25H120XB6C1200V 25A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba
9.1. mmgt200q120b6c.pdf Size:1334K _macmic
MMGT200Q120B6C1200V 200A IGBT ModuleJune 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 40N60C3R , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



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Recientemente añadidas las descripciónes de los transistores
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