MMGT25H120XB6C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMGT25H120XB6C  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 192 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 35 nS

Encapsulados: MODULE

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MMGT25H120XB6C datasheet

 ..1. Size:162K  macmic
 mmgt25h120xb6c.pdf pdf_icon

MMGT25H120XB6C

MMGT25H120XB6C 1200V 25A PIM Module September 2015 Version 0 RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba

 9.1. Size:1334K  macmic
 mmgt200q120b6c.pdf pdf_icon

MMGT25H120XB6C

MMGT200Q120B6C 1200V 200A IGBT Module June 2018 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APP

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