MMGT25H120XB6C Todos los transistores

 

MMGT25H120XB6C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMGT25H120XB6C

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Máxima potencia disipada (Pc), W: 192

Tensión máxima colector-emisor |Vce|, V: 1200

Tensión máxima puerta-emisor |Vge|, V: 20

Colector de Corriente Continua a 25℃ |Ic|, A: 40

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.85

Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5

Temperatura máxima de unión (Tj), ℃: 175

Tiempo de subida (tr), typ, nS: 35

Carga total de la puerta (Qg), typ, nC: 145

Paquete / Cubierta: MODULE

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MMGT25H120XB6C Datasheet (PDF)

 ..1. Size:162K  macmic
mmgt25h120xb6c.pdf

MMGT25H120XB6C MMGT25H120XB6C

MMGT25H120XB6C1200V 25A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba

 9.1. Size:1334K  macmic
mmgt200q120b6c.pdf

MMGT25H120XB6C MMGT25H120XB6C

MMGT200Q120B6C1200V 200A IGBT ModuleJune 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP

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