All IGBT. MMGT25H120XB6C Datasheet

 

MMGT25H120XB6C IGBT. Datasheet pdf. Equivalent


   Type Designator: MMGT25H120XB6C
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 192
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 40
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 35
   Total Gate Charge (Qg), typ, nC: 145
   Package: MODULE

 MMGT25H120XB6C Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MMGT25H120XB6C Datasheet (PDF)

 ..1. Size:162K  macmic
mmgt25h120xb6c.pdf

MMGT25H120XB6C
MMGT25H120XB6C

MMGT25H120XB6C1200V 25A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba

 9.1. Size:1334K  macmic
mmgt200q120b6c.pdf

MMGT25H120XB6C
MMGT25H120XB6C

MMGT200Q120B6C1200V 200A IGBT ModuleJune 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP

Datasheet: MMG800D060B6EN , MMGT100J120UZ6C , MMGT100W120X6C , MMGT100WD120XB6C , MMGT10CB120XB6C , MMGT15CB120XB6C , MMGT15H120XB6C , MMGT200Q120B6C , MSG75T120FQC1 , MMGT40H120XB6C , MMGT50H120X6C , MMGT50W120X6C , MMGT50W120XB6C , MMGT75H120X6C , MMGT75W120X6C , MMGT75W120XB6C , MMGT75WD120XB6C .

 

 
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