IXDH30N120D1 Todos los transistores

 ..1. Size:83K  ixys
 ixdh30n120d1.pdf

IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V High Voltage IGBT IC25 = 60 A with optional Diode VCE(sat) typ = 2.4 V Short Circuit SOA Capability C C Square RBSOA TO-247 AD (IXDH) G G G C C (TAB) E E E IXDH 30N120 IXDH 30N120 D1 G = Gate, E = Emitter C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology VCES TJ = 25 C to 150 C 1200 V

 ..2. Size:86K  ixys
 ixdh30n120 ixdt30n120 ixdh30n120d1 ixdt30n120d1.pdf

IXDH 30N120 VCES = 1200 V High Voltage IGBT IXDH 30N120 D1 IC25 = 60 A with optional Diode IXDT 30N120 VCE(sat) typ = 2.4 V IXDT 30N120 D1 Short Circuit SOA Capability C C Square RBSOA TO-247 AD (IXDH) G G E E G C C (TAB) IXDH 30N120 IXDH 30N120 D1 E IXDT 30N120 IXDT 30N120 D1 TO--268 AA (IXDT) Symbol Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V E C (T

 4.1. Size:83K  ixys
 ixdh30n120.pdf

IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V High Voltage IGBT IC25 = 60 A with optional Diode VCE(sat) typ = 2.4 V Short Circuit SOA Capability C C Square RBSOA TO-247 AD (IXDH) G G G C C (TAB) E E E IXDH 30N120 IXDH 30N120 D1 G = Gate, E = Emitter C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology VCES TJ = 25 C to 150 C 1200 V

 4.2. Size:54K  ixys
 ixdh30n120au1 ixdt30n120au1.pdf

High Voltage IGBT IXDH 30N120AU1 VCES = 1200 V IXDT 30N120AU1 IC25 = 50 A with Diode VCE(sat) typ = 2.5 V Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings TO-247 AD (IXDH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C (TAB) G VGES Continuous 20 V C E VGEM Transient 30 V TO-268 AA (IXDT) IC25 TC = 25 C5

 9.1. Size:325K  ixys
 ixdh35n60b.pdf

IXDP 35N60 B VCES = 600 V IGBT IXDH 35N60 B IC25 = 60 A with optional Diode IXDH 35N60 BD1 VCE(sat) typ = 2.1 V High Speed, Low Saturation Voltage C C TO-247 AD IXDH ... G G G E E C C (TAB) E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 B Symbol Conditions Maximum Ratings TO-220 AB IXDP ... VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 20 kW 600 V G C E VG

 9.2. Size:325K  ixys
 ixdh35n60bd1.pdf

IXDP 35N60 B VCES = 600 V IGBT IXDH 35N60 B IC25 = 60 A with optional Diode IXDH 35N60 BD1 VCE(sat) typ = 2.1 V High Speed, Low Saturation Voltage C C TO-247 AD IXDH ... G G G E E C C (TAB) E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 B Symbol Conditions Maximum Ratings TO-220 AB IXDP ... VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 20 kW 600 V G C E VG