All IGBT. IXDH30N120D1 Datasheet

 

IXDH30N120D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXDH30N120D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 250 pF
   Qgⓘ - Total Gate Charge, typ: 120 nC
   Package: TO247

 IXDH30N120D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXDH30N120D1 Datasheet (PDF)

 ..1. Size:83K  ixys
 ixdh30n120d1.pdf

IXDH30N120D1 IXDH30N120D1

IXDH 30N120IXDH 30N120 D1VCES = 1200 VHigh Voltage IGBTIC25 = 60 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilityC CSquare RBSOA TO-247 AD (IXDH)G GGCC (TAB)E EEIXDH 30N120 IXDH 30N120 D1 G = Gate, E = EmitterC = Collector , TAB = CollectorSymbol Conditions Maximum Ratings Features NPT IGBT technologyVCES TJ = 25C to 150C 1200 V

 ..2. Size:86K  ixys
 ixdh30n120 ixdt30n120 ixdh30n120d1 ixdt30n120d1.pdf

IXDH30N120D1 IXDH30N120D1

IXDH 30N120VCES = 1200 VHigh Voltage IGBTIXDH 30N120 D1IC25 = 60 Awith optional DiodeIXDT 30N120VCE(sat) typ = 2.4 VIXDT 30N120 D1Short Circuit SOA CapabilityC CSquare RBSOATO-247 AD (IXDH)G GE EGCC (TAB)IXDH 30N120 IXDH 30N120 D1EIXDT 30N120 IXDT 30N120 D1TO--268 AA (IXDT)Symbol Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VEC (T

 4.1. Size:83K  ixys
 ixdh30n120.pdf

IXDH30N120D1 IXDH30N120D1

IXDH 30N120IXDH 30N120 D1VCES = 1200 VHigh Voltage IGBTIC25 = 60 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilityC CSquare RBSOA TO-247 AD (IXDH)G GGCC (TAB)E EEIXDH 30N120 IXDH 30N120 D1 G = Gate, E = EmitterC = Collector , TAB = CollectorSymbol Conditions Maximum Ratings Features NPT IGBT technologyVCES TJ = 25C to 150C 1200 V

 4.2. Size:54K  ixys
 ixdh30n120au1 ixdt30n120au1.pdf

IXDH30N120D1 IXDH30N120D1

High Voltage IGBTIXDH 30N120AU1 VCES = 1200 VIXDT 30N120AU1 IC25 = 50 Awith DiodeVCE(sat) typ = 2.5 VShort Circuit SOA CapabilityPreliminary DataSymbol Test Conditions Maximum Ratings TO-247 AD (IXDH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VC (TAB)GVGES Continuous 20 VCEVGEM Transient 30 VTO-268 AA (IXDT)IC25 TC = 25C5

 9.1. Size:325K  ixys
 ixdh35n60b.pdf

IXDH30N120D1 IXDH30N120D1

IXDP 35N60 B VCES = 600 VIGBTIXDH 35N60 B IC25 = 60 Awith optional DiodeIXDH 35N60 BD1 VCE(sat) typ = 2.1 VHigh Speed,Low Saturation VoltageC CTO-247 AD IXDH ...G GGE ECC (TAB)E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 BSymbol Conditions Maximum Ratings TO-220 AB IXDP ...VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 20 kW 600 VG CEVG

 9.2. Size:325K  ixys
 ixdh35n60bd1.pdf

IXDH30N120D1 IXDH30N120D1

IXDP 35N60 B VCES = 600 VIGBTIXDH 35N60 B IC25 = 60 Awith optional DiodeIXDH 35N60 BD1 VCE(sat) typ = 2.1 VHigh Speed,Low Saturation VoltageC CTO-247 AD IXDH ...G GGE ECC (TAB)E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 BSymbol Conditions Maximum Ratings TO-220 AB IXDP ...VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 20 kW 600 VG CEVG

Datasheet: IRGBC40S , IRGS14B40L , IRGS14C40L , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , GT30F125 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 , IXDN75N120 , IXDT30N120 , IXDT30N120AU1 , IXDT30N120D1 , IXGA12N100 .

 

 
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