FGH40T120SMD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH40T120SMD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 555 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
trⓘ - Tiempo de subida, typ: 47 nS
Coesⓘ - Capacitancia de salida, typ: 180 pF
Encapsulados: TO247
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FGH40T120SMD datasheet
fgh40t120smd.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgh40t120smd fgh40t120smd-f155.pdf
IGBT - Field Stop, Trench 1200 V, 40 A FGH40T120SMD, FGH40T120SMD-F155 Description www.onsemi.com Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar C inverter, UPS, welder and PFC applications. Features FS Trench Technology, Positive Temperature
fgh40t120smdl4.pdf
IGBT - FS, Trench 1200 V, 40 A FGH40T120SMDL4 Description Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field stop trench IGBTs offer www.onsemi.com the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. VCES IC Features 1200 V 40 A FS Trench Technology, Positive Temperature Coeffi
fgh40t120sqdnl4.pdf
IGBT - Ultra Field Stop FGH40T120SQDNL4 This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device www.onsemi
Otros transistores... 2M410G , CI20T120P , IHW15N120E1 , RJH3044 , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 , MBQ40T65FDSC , FGH50T65SQD , NCE15TD60BD , NCE15TD60B , NCE15TD60BF , NCE80TD65BP , NCE80TD65BT , SGT60T65FD1PN , SGT60T65FD1P7 .
History: MSG15T120FPE
History: MSG15T120FPE
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