FGH40T120SMD PDF and Equivalents Search

 

FGH40T120SMD PDF Specs and Replacement


   Type Designator: FGH40T120SMD
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 555 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   tr ⓘ - Rise Time, typ: 47 nS
   Coesⓘ - Output Capacitance, typ: 180 pF
   Package: TO247
 

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FGH40T120SMD PDF specs

 ..1. Size:501K  1
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FGH40T120SMD

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..2. Size:591K  onsemi
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FGH40T120SMD

IGBT - Field Stop, Trench 1200 V, 40 A FGH40T120SMD, FGH40T120SMD-F155 Description www.onsemi.com Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar C inverter, UPS, welder and PFC applications. Features FS Trench Technology, Positive Temperature... See More ⇒

 0.1. Size:592K  onsemi
fgh40t120smdl4.pdf pdf_icon

FGH40T120SMD

IGBT - FS, Trench 1200 V, 40 A FGH40T120SMDL4 Description Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field stop trench IGBTs offer www.onsemi.com the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. VCES IC Features 1200 V 40 A FS Trench Technology, Positive Temperature Coeffi... See More ⇒

 4.1. Size:469K  onsemi
fgh40t120sqdnl4.pdf pdf_icon

FGH40T120SMD

IGBT - Ultra Field Stop FGH40T120SQDNL4 This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device www.onsemi... See More ⇒

Specs: 2M410G , CI20T120P , IHW15N120E1 , RJH3044 , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 , MBQ40T65FDSC , FGH50T65SQD , NCE15TD60BD , NCE15TD60B , NCE15TD60BF , NCE80TD65BP , NCE80TD65BT , SGT60T65FD1PN , SGT60T65FD1P7 .

Keywords - FGH40T120SMD transistor spec

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