NCE80TD65BP IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE80TD65BP

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 390 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 17 nS

Coesⓘ - Capacitancia de salida, typ: 258 pF

Encapsulados: TO3P

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NCE80TD65BP datasheet

..1. Size:661K 1
nce80td65bp nce80td65bt.pdf pdf_icon

PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

..2. Size:1542K ncepower
nce80td65bp.pdf pdf_icon

Pb Free Product NCE80TD65BP 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

..3. Size:661K ncepower
nce80td65bp nce80td65bt.pdf pdf_icon

4.1. Size:1591K ncepower
nce80td65bt4.pdf pdf_icon

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NCE80TD65BP Todos los transistores