All IGBT. NCE80TD65BP Datasheet

 

NCE80TD65BP IGBT. Datasheet pdf. Equivalent


   Type Designator: NCE80TD65BP
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 390
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 160
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 17
   Collector Capacity (Cc), typ, pF: 258
   Total Gate Charge (Qg), typ, nC: 331
   Package: TO3P

 NCE80TD65BP Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NCE80TD65BP Datasheet (PDF)

 ..1. Size:661K  1
 nce80td65bp nce80td65bt.pdf

NCE80TD65BP NCE80TD65BP

PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 ..2. Size:661K  ncepower
 nce80td65bp nce80td65bt.pdf

NCE80TD65BP NCE80TD65BP

PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 6.1. Size:660K  ncepower
 nce80td60bp nce80td60bt.pdf

NCE80TD65BP NCE80TD65BP

PbFreeProduct NCE80TD60BP,NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H

 8.1. Size:613K  ncepower
 nce80t560d nce80t560 nce80t560f.pdf

NCE80TD65BP NCE80TD65BP

NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 8.2. Size:613K  ncepower
 nce80t560f nce80t560 nce80t560d.pdf

NCE80TD65BP NCE80TD65BP

NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 8.3. Size:610K  ncepower
 nce80t320d nce80t320 nce80t320f.pdf

NCE80TD65BP NCE80TD65BP

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 8.4. Size:532K  ncepower
 nce80t420 nce80t420f.pdf

NCE80TD65BP NCE80TD65BP

NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 11 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

 8.5. Size:610K  ncepower
 nce80t320f nce80t320 nce80t320d.pdf

NCE80TD65BP NCE80TD65BP

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 8.6. Size:605K  ncepower
 nce80t900d nce80t900 nce80t900f.pdf

NCE80TD65BP NCE80TD65BP

NCE80T900D,NCE80T900,NCE80T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 900 m DS(ON)MAX with low gate charge. This super junction MOSFET fits the ID 6 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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