All IGBT. NCE80TD65BP Datasheet

 

NCE80TD65BP Datasheet and Replacement


   Type Designator: NCE80TD65BP
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 390 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 258 pF
   Package: TO3P
      - IGBT Cross-Reference

 

NCE80TD65BP Datasheet (PDF)

 ..1. Size:661K  1
nce80td65bp nce80td65bt.pdf pdf_icon

NCE80TD65BP

PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 ..2. Size:1542K  ncepower
nce80td65bp.pdf pdf_icon

NCE80TD65BP

Pb Free ProductNCE80TD65BP650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 ..3. Size:661K  ncepower
nce80td65bp nce80td65bt.pdf pdf_icon

NCE80TD65BP

PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 4.1. Size:1591K  ncepower
nce80td65bt4.pdf pdf_icon

NCE80TD65BP

Pb Free ProductNCE80TD65BT4650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

Datasheet: YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD , NCE15TD60B , NCE15TD60BF , IRG4PC40W , NCE80TD65BT , SGT60T65FD1PN , SGT60T65FD1P7 , SGT60T65FD1PS , SGT60T65FD1PT , GPK100HF120D1 , GPK200HF120D2 , GPU100HF120D1 .

History: APT27GA90BD15 | IRG4PF50WD | NGD8205N | FGA180N33ATD | FII50-12E | SRE50N065FSU | NGTG15N120FL2

Keywords - NCE80TD65BP transistor datasheet

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