HM20N120T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HM20N120TTypical Performance Characteristics Figure1:maximum DC collector current Figure2:power dissipation VS. case temprature VS. case temprature Figure3:forward SOA,TC=25,TJ150 Figure4:reverse bias SOA,TJ=150,VGE=15V - 3 - Rev1.1 November. 2011 Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com HM20N120TFigure5:typical IGBT output characteristics, Fi

IGBT Features 1200V,20A VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft current turn-off waveforms General Description KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications. Absolute Maximum Ratings Sym

IGBT Features 1200V,20A VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft current turn-off waveforms General Description KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications. Absolute Maximum Ratings Symbol

HM20N15AN-Channel Enhancement Mode Power MOSFET Description The HM20N15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

HM20N15NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

HM20N15KAN-Channel Enhancement Mode Power MOSFET Description The HM20N15KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

HM20N15DN-Channel Enhancement Mode Power MOSFET Description The HM20N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =20A RDS(ON)

HM20N15KDescription The HM20N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)