Справочник IGBT. HM20N120T

 

HM20N120T - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: HM20N120T
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 192
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 40
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.1
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 5.5
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 50
   Емкость коллектора типовая (Cc), pf: 135
   Общий заряд затвора (Qg), typ, nC: 120
   Тип корпуса: TO247

 Аналог (замена) для HM20N120T

 

 

HM20N120T Datasheet (PDF)

 ..1. Size:962K  cn hmsemi
 hm20n120t.pdf

HM20N120T HM20N120T

HM20N120TTypical Performance Characteristics Figure1:maximum DC collector current Figure2:power dissipation VS. case temprature VS. case temprature Figure3:forward SOA,TC=25,TJ150 Figure4:reverse bias SOA,TJ=150,VGE=15V - 3 - Rev1.1 November. 2011 Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com HM20N120TFigure5:typical IGBT output characteristics, Fi

 0.1. Size:808K  cn hmsemi
 hm20n120tb.pdf

HM20N120T HM20N120T

IGBT Features 1200V,20A VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft current turn-off waveforms General Description KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications. Absolute Maximum Ratings Sym

 6.1. Size:798K  cn hmsemi
 hm20n120ab.pdf

HM20N120T HM20N120T

IGBT Features 1200V,20A VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft current turn-off waveforms General Description KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications. Absolute Maximum Ratings Symbol

 8.1. Size:830K  cn hmsemi
 hm20n15a.pdf

HM20N120T HM20N120T

HM20N15AN-Channel Enhancement Mode Power MOSFET Description The HM20N15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

 8.2. Size:394K  cn hmsemi
 hm20n15.pdf

HM20N120T HM20N120T

HM20N15NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

 8.3. Size:620K  cn hmsemi
 hm20n15ka.pdf

HM20N120T HM20N120T

HM20N15KAN-Channel Enhancement Mode Power MOSFET Description The HM20N15KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

 8.4. Size:877K  cn hmsemi
 hm20n15d.pdf

HM20N120T HM20N120T

HM20N15DN-Channel Enhancement Mode Power MOSFET Description The HM20N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =20A RDS(ON)

 8.5. Size:517K  cn hmsemi
 hm20n15k.pdf

HM20N120T HM20N120T

HM20N15KDescription The HM20N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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