AOD5B65M1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOD5B65M1  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 69 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.57 V @25℃

trⓘ - Tiempo de subida, typ: 13 nS

Coesⓘ - Capacitancia de salida, typ: 36 pF

Encapsulados: TO252

  📄📄 Copiar 

 Búsqueda de reemplazo de AOD5B65M1 IGBT

- Selecciónⓘ de transistores por parámetros

 

AOD5B65M1 datasheet

 ..1. Size:765K  aosemi
 aod5b65m1.pdf pdf_icon

AOD5B65M1

AOD5B65M1 TM 650V, 5A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

 0.1. Size:1255K  aosemi
 aod5b65m1e.pdf pdf_icon

AOD5B65M1

AOD5B65M1E TM 650V, 5A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Very fast and soft recovery freewheeling diode 650V High efficient turn-on di/dt controllability IC (TC=100 C) 5A Low VCE(sat) for low conduction losses VCE(sat) (TJ=25 C) 2.15V Soft switching performance and low EMI High electrostatic perfor

 0.2. Size:1088K  aosemi
 aod5b65m1h.pdf pdf_icon

AOD5B65M1

AOD5B65M1H TM 650V, 5A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

 6.1. Size:773K  aosemi
 aod5b65mq1e.pdf pdf_icon

AOD5B65M1

AOD5B65MQ1E TM 650V, 5A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 5A C) IGBT copacked with very fast and soft antiparallel VCE(sat) (TJ=25 2.15V C) diode Very good EMI performance with lower turn-on switching losses

MOSTRAR MÁS

Otros transistores... CRG60T60AN3H, FGPF70N33BT, MBQ40T65QES, SSG55N60M, SSG55N60Z, SSG55N60N, SSG55N60P, YGW40N65F1, BT40T60ANF, AOTF15B65M1, CRG15T120BNR3S, GPU200HF120D2SE, RCF1565SL1, RCP1565SL1, RCB1565SL1, RCD1565SL1, KGF65A6H