All IGBT. AOD5B65M1 Datasheet

 

AOD5B65M1 Datasheet and Replacement


   Type Designator: AOD5B65M1
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 5B65M1
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 69 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.57 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.1(typ) V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 13 nS
   Coesⓘ - Output Capacitance, typ: 36 pF
   Qg ⓘ - Total Gate Charge, typ: 14 nC
   Package: TO252
 

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AOD5B65M1 Datasheet (PDF)

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AOD5B65M1

AOD5B65M1TM 650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

 0.1. Size:1255K  aosemi
 aod5b65m1e.pdf pdf_icon

AOD5B65M1

AOD5B65M1ETM650V, 5A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Very fast and soft recovery freewheeling diode 650V High efficient turn-on di/dt controllabilityIC (TC=100C) 5A Low VCE(sat) for low conduction lossesVCE(sat) (TJ=25C) 2.15V Soft switching performance and low EMI High electrostatic perfor

 0.2. Size:1088K  aosemi
 aod5b65m1h.pdf pdf_icon

AOD5B65M1

AOD5B65M1HTM650V, 5A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

 6.1. Size:773K  aosemi
 aod5b65mq1e.pdf pdf_icon

AOD5B65M1

AOD5B65MQ1ETM 650V, 5A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 5AC) IGBT copacked with very fast and soft antiparallelVCE(sat) (TJ=25 2.15VC) diode Very good EMI performance with lower turn-on switching losses

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Datasheet: CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , YGW40N65F1 , CRG40T60AN3H , AOTF15B65M1 , CRG15T120BNR3S , GPU200HF120D2SE , RCF1565SL1 , RCP1565SL1 , RCB1565SL1 , RCD1565SL1 , KGF65A6H .

History: TIG064E8

Keywords - AOD5B65M1 transistor datasheet

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