AOD5B65M1 Datasheet. Specs and Replacement

Type Designator: AOD5B65M1  📄📄 

Type: IGBT + Anti-Parallel Diode

Marking Code: 5B65M1

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 69 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 10 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.57 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.1(typ) V

tr ⓘ - Rise Time, typ: 13 nS

Coesⓘ - Output Capacitance, typ: 36 pF

Qg ⓘ - Total Gate Charge, typ: 14 nC

Package: TO252

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AOD5B65M1 datasheet

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AOD5B65M1

AOD5B65M1 TM 650V, 5A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies... See More ⇒

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AOD5B65M1

AOD5B65M1E TM 650V, 5A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Very fast and soft recovery freewheeling diode 650V High efficient turn-on di/dt controllability IC (TC=100 C) 5A Low VCE(sat) for low conduction losses VCE(sat) (TJ=25 C) 2.15V Soft switching performance and low EMI High electrostatic perfor... See More ⇒

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AOD5B65M1

AOD5B65M1H TM 650V, 5A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies ... See More ⇒

 6.1. Size:773K  aosemi
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AOD5B65M1

AOD5B65MQ1E TM 650V, 5A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 5A C) IGBT copacked with very fast and soft antiparallel VCE(sat) (TJ=25 2.15V C) diode Very good EMI performance with lower turn-on switching losses ... See More ⇒

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Specs: CRG60T60AN3H, FGPF70N33BT, MBQ40T65QES, SSG55N60M, SSG55N60Z, SSG55N60N, SSG55N60P, YGW40N65F1, BT40T60ANF, AOTF15B65M1, CRG15T120BNR3S, GPU200HF120D2SE, RCF1565SL1, RCP1565SL1, RCB1565SL1, RCD1565SL1, KGF65A6H

Keywords - AOD5B65M1 transistor spec

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