BG150B12LY2-I Todos los transistores

 

BG150B12LY2-I - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BG150B12LY2-I
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 68 nS
   Coesⓘ - Capacitancia de salida, typ: 580 pF
   Paquete / Cubierta: MODULE
 

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BG150B12LY2-I Datasheet (PDF)

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BG150B12LY2-I

BG150B12LY2-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12LY2-I provides low Half-bridge switching loss as well as high short circuit capability, which Low inductance introduce the advanced IGBT chip/FWD and improved Standard package connection, it is able to take on a perfect performa

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BG150B12LY2-I

BG150B12UY3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12UY3-I provides fast High speed IGBT in trench/field stop technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SII150N12

 

 
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