BG150B12LY2-I Todos los transistores

 

BG150B12LY2-I - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BG150B12LY2-I
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 68 nS
   Coesⓘ - Capacitancia de salida, typ: 580 pF
   Qgⓘ - Carga total de la puerta, typ: 880 nC
   Paquete / Cubierta: MODULE

 Búsqueda de reemplazo de BG150B12LY2-I - IGBT

 

BG150B12LY2-I Datasheet (PDF)

 ..1. Size:1130K  cn byd
bg150b12ly2-i.pdf

BG150B12LY2-I
BG150B12LY2-I

BG150B12LY2-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12LY2-I provides low Half-bridge switching loss as well as high short circuit capability, which Low inductance introduce the advanced IGBT chip/FWD and improved Standard package connection, it is able to take on a perfect performa

 6.1. Size:988K  cn byd
bg150b12uy3-i.pdf

BG150B12LY2-I
BG150B12LY2-I

BG150B12UY3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12UY3-I provides fast High speed IGBT in trench/field stop technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD

Otros transistores... GT60M324 , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , TGAN60N60F2DS , BG150B12UY3-I , BG200B12UY3-I , MPBW25N120B , MPBW40N60BF , MPBW40N65BH , MPFF100R12RB , MPFF50R12RB , MPFF75R12RB .

 

 
Back to Top

 


BG150B12LY2-I
  BG150B12LY2-I
  BG150B12LY2-I
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2

 

 

 
Back to Top