All IGBT. BG150B12LY2-I Datasheet

 

BG150B12LY2-I IGBT. Datasheet pdf. Equivalent


   Type Designator: BG150B12LY2-I
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 1250
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 150
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 68
   Collector Capacity (Cc), typ, pF: 580
   Total Gate Charge (Qg), typ, nC: 880
   Package: MODULE

 BG150B12LY2-I Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BG150B12LY2-I Datasheet (PDF)

 ..1. Size:1130K  cn byd
 bg150b12ly2-i.pdf

BG150B12LY2-I BG150B12LY2-I

BG150B12LY2-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12LY2-I provides low Half-bridge switching loss as well as high short circuit capability, which Low inductance introduce the advanced IGBT chip/FWD and improved Standard package connection, it is able to take on a perfect performa

 6.1. Size:988K  cn byd
 bg150b12uy3-i.pdf

BG150B12LY2-I BG150B12LY2-I

BG150B12UY3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12UY3-I provides fast High speed IGBT in trench/field stop technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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