BG150B12LY2-I Specs and Replacement
Type Designator: BG150B12LY2-I
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 68 nS
Coesⓘ - Output Capacitance, typ: 580 pF
Package: MODULE BG150B12LY2-I Substitution - IGBT ⓘ Cross-Reference Search
BG150B12LY2-I datasheet
bg150b12ly2-i.pdf
BG150B12LY2-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12LY2-I provides low Half-bridge switching loss as well as high short circuit capability, which Low inductance introduce the advanced IGBT chip/FWD and improved Standard package connection, it is able to take on a perfect performa... See More ⇒
Specs: GT60M324, DG25X12T2, DG40X12T2, GD100HFX65C1S, GD75HFF120C1S, SL40T65FL, BG75B12UX3-I, BG100B12UX3-I, RJH30E2DPP, BG150B12UY3-I, BG200B12UY3-I, MPBW25N120B, MPBW40N60BF, MPBW40N65BH, MPFF100R12RB, MPFF50R12RB, MPFF75R12RB
Keywords - BG150B12LY2-I transistor spec
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History: RJH1CD7DPQ-E0 | AFGY120T65SPD
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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