RGT50NS65D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RGT50NS65D
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 194 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 48 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 32 nS
Coesⓘ - Capacitancia de salida, typ: 56 pF
Paquete / Cubierta: LPDS
Búsqueda de reemplazo de RGT50NS65D IGBT
RGT50NS65D datasheet
rgt50ns65d.pdf
RGT50NS65D 650V 25A Field Stop Trench IGBT Data Sheet lOutline LPDS / TO-262 VCES 650V (2) IC(100 C) 25A VCE(sat) (Typ.) 1.65V (1) (3) PD 194W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft
rgt50nl65d.pdf
RGT50NL65D 650V 25A Field Stop Trench IGBT Datasheet Outline LPDL (TO-263L) VCES 650V (2) IC(100 C) 25A VCE(sat) (Typ.) 1.65V (1) (3) PD 194W Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1
rgt50ts65d.pdf
RGT50TS65D 650V 25A Field Stop Trench IGBT Data Sheet lOutline TO-247N VCES 650V IC(100 C) 25A VCE(sat) (Typ.) 1.65V PD 174W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built i
Otros transistores... MPBW40N60BF , MPBW40N65BH , MPFF100R12RB , MPFF50R12RB , MPFF75R12RB , RGPR20NS43 , RGS80TSX2DHR , RGT50NL65D , CRG40T60AK3HD , RGT80TS65DGC13 , RGTH60TS65DGC13 , BT15T120CNR , BT15T60A8F , BT15T60A9F , BT25T120CKR , BT40T120CKF , BT50T60ANFK .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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