DGTD120T40S1PT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DGTD120T40S1PT
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 357 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 55 nS
Coesⓘ - Capacitancia de salida, typ: 206 pF
Qgⓘ - Carga total de la puerta, typ: 341 nC
Paquete / Cubierta: TO247
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DGTD120T40S1PT Datasheet (PDF)
dgtd120t40s1pt.pdf
DGTD120T40S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T40S1PT is produced using advanced Field Stop High-Speed Switching & Low Power Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 40A quality and high switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 200A/us Ultra Sof
dgtd120t25s1pt.pdf
DGTD120T25S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T25S1PT is produced using advanced Field Stop High Speed Switching & Low VCE(sat) Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 25A quality and high-switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 500A/s Ultra
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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