All IGBT. DGTD120T40S1PT Datasheet

 

DGTD120T40S1PT Datasheet and Replacement


   Type Designator: DGTD120T40S1PT
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 357 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 55 nS
   Coesⓘ - Output Capacitance, typ: 206 pF
   Package: TO247
 

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DGTD120T40S1PT Datasheet (PDF)

 ..1. Size:1040K  diodes
 dgtd120t40s1pt.pdf pdf_icon

DGTD120T40S1PT

DGTD120T40S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T40S1PT is produced using advanced Field Stop High-Speed Switching & Low Power Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 40A quality and high switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 200A/us Ultra Sof

 6.1. Size:1626K  diodes
 dgtd120t25s1pt.pdf pdf_icon

DGTD120T40S1PT

DGTD120T25S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T25S1PT is produced using advanced Field Stop High Speed Switching & Low VCE(sat) Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 25A quality and high-switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 500A/s Ultra

Datasheet: BT15T120CNR , BT15T60A8F , BT15T60A9F , BT25T120CKR , BT40T120CKF , BT50T60ANFK , BT60T60ANFK , DGTD120T25S1PT , CRG75T60AK3HD , DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC , KGF75N65KDF , LEGM200BA120L2H , LEGM200BH120L2K .

History: IKQ120N60TA

Keywords - DGTD120T40S1PT transistor datasheet

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