DGTD120T40S1PT PDF and Equivalents Search

 

DGTD120T40S1PT Specs and Replacement

Type Designator: DGTD120T40S1PT

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 357 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 55 nS

Coesⓘ - Output Capacitance, typ: 206 pF

Package: TO247

 DGTD120T40S1PT Substitution

- IGBTⓘ Cross-Reference Search

 

DGTD120T40S1PT datasheet

 ..1. Size:1040K  diodes
 dgtd120t40s1pt.pdf pdf_icon

DGTD120T40S1PT

DGTD120T40S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T40S1PT is produced using advanced Field Stop High-Speed Switching & Low Power Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 40A quality and high switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 200A/us Ultra Sof... See More ⇒

 6.1. Size:1626K  diodes
 dgtd120t25s1pt.pdf pdf_icon

DGTD120T40S1PT

DGTD120T25S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T25S1PT is produced using advanced Field Stop High Speed Switching & Low VCE(sat) Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 25A quality and high-switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 500A/ s Ultra... See More ⇒

Specs: BT15T120CNR, BT15T60A8F, BT15T60A9F, BT25T120CKR, BT40T120CKF, BT50T60ANFK, BT60T60ANFK, DGTD120T25S1PT, GT30F133, DGTD65T15H2TF, DGTD65T40S2PT, DGTD65T50S1PT, DGTD65T60S2PT, KGF40N65KDC, KGF75N65KDF, LEGM200BA120L2H, LEGM200BH120L2K

Keywords - DGTD120T40S1PT transistor spec

 DGTD120T40S1PT cross reference
 DGTD120T40S1PT equivalent finder
 DGTD120T40S1PT lookup
 DGTD120T40S1PT substitution
 DGTD120T40S1PT replacement

 

 

 

 

↑ Back to Top
.