MSG100T65HLC1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG100T65HLC1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 882
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 200
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.65(max)
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 147
Capacitancia de salida (Cc), typ, pF: 430
Paquete / Cubierta: TO247PLUS
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MSG100T65HLC1 Datasheet (PDF)
msg100t65hlb3 msg100t65hlc1.pdf
MSG100T65HLB3/C1Features Very Low Saturation Voltage:VCE(sat) = 1.65V @ IC = 100 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-Efficient Tight Parameter Distribution High Input ImpedanceApplications Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Other Power-Train ApplicationsRequiring High Power Swit
msg100t120fqw.pdf
MSG100T120FQWFeatures High efficiency in hard switchingAnd resonant topologies 10sec short circuit withstandTime at Tvj=175C Low Gate Charge QG Very soft,fast recovery fullCurrent anti-parallel diode Maximum junction temperatureT =175CvjmaxApplications UPS Charger Energy Storage Three-level Solar String InverterAbsolute Ratings(
msg100t100fln msg100t100fqw.pdf
MSG100T100FLN/QWFeature Low gate charge Trench FS Technology, saturation voltage: V (sat), typ=1.85V@ Ic=CE100A and TC=25 ROHS productApplications UPS Solar inverterMaximum RatingsParameter Symbol Rating UnitCollector-emitter voltage V 1000 VCETc=25 200 A*DC collector current, limited by T Ivjmax CTc=100 100 APulsed collector curr
msg100d350fh msg100d350fhs.pdf
MSG100D350FH/FHSFeatures Low gate charge Trench FS Technology Saturation voltage:Vce(sat),typ=2.0,Ic=100Aand Tc=25 RoHS ProductApplications UPS General purpose invertersAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100
msg100n350fh.pdf
MSG100N350FHFeatures High Speed switching Low Saturation Voltage:VCE(sat) = 2.2V @ IC = 100 A Built-in Fast Recovery diode RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Colle
Otros transistores... MG200HF12MIC2 , MG200HF12MRC2 , MG400HF12MIC2 , MG400HF12MRC2 , MG75HF12MIC1 , MG75HF12MRC1 , MG75U12MRGJ , MSG100T65HLB3 , IRGP4062D , MSG120T65HLC1 , MSG15T120FPC , MSG15T120FPE , MSG15T65FL , MSG15T65FLT , MSG15T65FLE , MSG160T65HLC1 , MSG20T65FQS .
Liste
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