MSG20T65FQS Todos los transistores

 

MSG20T65FQS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSG20T65FQS

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 156 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 56 nS

Coesⓘ - Capacitancia de salida, typ: 128 pF

Encapsulados: TO220F

 Búsqueda de reemplazo de MSG20T65FQS IGBT

- Selección ⓘ de transistores por parámetros

 

MSG20T65FQS datasheet

 ..1. Size:8407K  cn maspower
msg20t65fqs msg20t65fqt msg20t65fqe msg20t65fqc.pdf pdf_icon

MSG20T65FQS

MSG20T65FQS/T MSG20T65FQE/C Features Low gate charge Trench FS Technology, saturation voltage V , CE(sat) typ =1.6V,IC=20A and TC =25 C RoHS product Applications General purpose inverters UPS Absolute Ratings Tc=25 MSG20T MSG20T65FQT/ MSG20 Parameter Symbol Unit 65FQS MSG20T65FQE T65FQC Collector-Emmiter Voltage Vces 650 V 40 A Ic T=25 Col

 ..2. Size:8342K  cn maspower
msg20t65fqs msg20t65fqt msg20t65fqc.pdf pdf_icon

MSG20T65FQS

MSG20T65FQS/T/C Features Low gate charge Trench FS Technology, saturation voltage V , CE(sat) typ =1.6V,IC=20A and TC =25 C RoHS product Applications General purpose inverters UPS Absolute Ratings Tc=25 MSG2 MSG2 MSG2 Parameter Symbol 0T65F 0T65F 0T65F Unit QS QT QC Collector-Emmiter Voltage Vces 650 V 40 A Ic T=25 Collector Current-continu

 5.1. Size:2991K  cn maspower
msg20t65fle.pdf pdf_icon

MSG20T65FQS

MSG20T65FLE 650V Field stop Trench IGBT Features High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 1.6V @ IC = 20A High Input Impedance Short circuit withstand time 10 s Applications PFC UPS Inverter Absolute Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 650 CES V Gate-emitter voltage V 30 G

 6.1. Size:6593K  cn maspower
msg20t65hpc0 msg20t65hpe0 msg20t65hpt1.pdf pdf_icon

MSG20T65FQS

MSG20T65HPC0/E0/T1 Features Low gate charge Trench FS Technology, saturation voltage V , CE(sat) typ =1.6V,IC=20A and TC =25 C RoHS product Applications General purpose inverters UPS Absolute Ratings Tc=25 Parameter Symbol Typ Unit Collector-Emmiter Voltage Vces 650 V 40 A Ic T=25 Collector Current-continuous T=100 20 A Collector Curren

Otros transistores... MSG100T65HLC1 , MSG120T65HLC1 , MSG15T120FPC , MSG15T120FPE , MSG15T65FL , MSG15T65FLT , MSG15T65FLE , MSG160T65HLC1 , FGH40N60SFD , MSG20T65FQT , MSG20T65FQC , MSG30T65FT , MSG30T65FS , MSG30T65FC , MSG40T65FL , MSG50T120FQW , MSG75T120FQC1 .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

a1015 transistor | c945 | ac128 transistor | 2n3055 transistor | 2n3904 datasheet | irf3710 | tip3055 | mosfet datasheet

 

 

↑ Back to Top
.