MSG30T65FT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG30T65FT
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 63
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 60
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.75
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 67
Capacitancia de salida (Cc), typ, pF: 160
Carga total de la puerta (Qg), typ, nC: 64.5
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MSG30T65FT - IGBT
MSG30T65FT Datasheet (PDF)
msg30t65ft msg30t65fs.pdf
MSG30T65FT/FSFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.75V,I =30A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V60 AIc T=25*Collector Current-continuousT=10030 ACollector Cur
msg30t65ft msg30t65fs msg30t65fc.pdf
MSG30T65FT/S/CFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.75V,I =30A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V60 AIc T=25*Collector Current-continuousT=10030 ACollector Cu
msg30t65flt.pdf
MSG30T65FLTFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.75V,I =30A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V60 AIc T=25*Collector Current-continuousT=10030 ACollector Curre
msg30t65fhs msg30t65fht.pdf
MSG30T65FHS/TFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.75V,I =30A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V60 AIc T=25*Collector Current-continuousT=10030 ACollector Cur
msg30d120flb.pdf
MSG30D120FLBFeatures High Gate Charge Trench FS Technology Low Saturation Voltage:VCE(sat) = 1.5V @ IC = 30 A RoHS ComplaintApplications General Purpose inverters upsAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 1200CESVGate to Emitter Voltage V 20GEST =25 60CCollector Current ICT =100 30 A
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ