MSG50T120FQW Todos los transistores

 

MSG50T120FQW - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSG50T120FQW
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 320
   Tensión máxima colector-emisor |Vce|, V: 1200
   Tensión máxima puerta-emisor |Vge|, V: 30
   Colector de Corriente Continua a 25℃ |Ic|, A: 80
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.1
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 80
   Capacitancia de salida (Cc), typ, pF: 160
   Carga total de la puerta (Qg), typ, nC: 170
   Paquete / Cubierta: TO264

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MSG50T120FQW Datasheet (PDF)

 ..1. Size:6161K  cn maspower
msg50t120fqw.pdf

MSG50T120FQW
MSG50T120FQW

MSG50T120FQWFeatures Extremely Efficient Trench with FieldStop Technology TJmax =175C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10s Short Circuit CapabilityApplications Solar Inverter UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VCES100 AIc T=25Collector Curren

 4.1. Size:8669K  cn maspower
msg50t120fhw.pdf

MSG50T120FQW
MSG50T120FQW

MSG50T120FHW1200V Field stop Trench IGBTFeatures High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 50A High Input ImpedanceApplications PFC UPS InverterAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 1200CESVGate-emitter voltage V 20GEST =25C 100CCollector curre ICT

 8.1. Size:7802K  cn maspower
msg50t65fqc.pdf

MSG50T120FQW
MSG50T120FQW

MSG50T65FQCN-Channel IGBTFeatures Low gate charge Trench FS Technology Saturation voltage:VCE(sat),typ=1.6V@IC=50A and TC=25Applications General purpose inverter UPSAbsolute Ratings(Tc=25)ValueParameter Symbol UnitMSG50N65FQCCollector-Emmiter Voltage V 650 VceIC 100 A*Collector Current-continuous T=25T=10050 AIF100 ADiod

 8.2. Size:7751K  cn maspower
msg50t65fhc.pdf

MSG50T120FQW
MSG50T120FQW

MSG50T65FHCFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.6V,I =50A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V100 AIc T=25*Collector Current-continuousT=10050 ACollector Curre

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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Recientemente añadidas las descripciónes de los transistores

IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ

 

 

 
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