MSG75T120FQW - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG75T120FQW
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 625 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 115 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 470
Capacitancia de salida (Cc), typ, pF: 312
Paquete / Cubierta: TO264
Búsqueda de reemplazo de MSG75T120FQW - IGBT
MSG75T120FQW Datasheet (PDF)
msg75t120fqc1 msg75t120fqw.pdf
MSG75T120FQW/C1Features V = 1.85V@V = 15V,I = 75ACE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveformsApplications UPS AC & DC motor controls general purpose inverter .Absolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VceI 115 ACCollector Current-continuous T=25
msg75t120fqw.pdf
MSG75T120FQWFeatures V = 1.85V@V = 15V,I = 75ACE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveformsApplications UPS AC & DC motor controls general purpose inverter .Absolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VceI 115 ACCollector Current-continuous T=25
msg75t65fqc.pdf
MSG75T65FQCN-Channel IGBTFeatures Low gate charge FS Technology Short circuit withstand time 10 uS Saturation voltage:VCE(sat),typ=1.7VApplications General purpose inverter Induction heating(IH) UPSOrder MessageOrder codes Marking PackageMSG75T65FQC MSG75T65FQC TO-247Absolute Ratings(Tc=25)ValueParameter Symbol UnitMSG75T65FQCCollector
msg75t65hhc0.pdf
MSG75T65HHC0N-Channel IGBTFeatures Low gate charge Short circuit withstand time 10 uS Saturation voltage:VCE(sat),typ=1.7VApplications General purpose inverter Induction heating(IH) UPSOrder MessageOrder codes Marking PackageMSG75T65HHC0 MSG75T65HHC0 TO-247Absolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage V 650 Vce
msg75c65hhc0.pdf
MSG75C65HHC0N-Channel IGBTFeatures Low gate charge Trench FS Technology, silicon carbide diode Fast switching speed Low switching losses VCE(sat) with positive temperature coefficient RoHS productApplications Charging pile UPS Solar convertersAbsolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage V 650 Vce
Otros transistores... MSG20T65FQT , MSG20T65FQC , MSG30T65FT , MSG30T65FS , MSG30T65FC , MSG40T65FL , MSG50T120FQW , MSG75T120FQC1 , SGT40N60NPFDPN , MSG75T65FQC , CRG25T120BK3S , CRG40T120AK3S , CRG40T120AK3SD , CRG40T60AN3H , CRG40T60AN3HD , CRG40T60AK3HD , CRG40T65AK5H .
Liste
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