MSG75T120FQW - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG75T120FQW
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 625
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 30
Colector de Corriente Continua a 25℃ |Ic|, A: 115
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.85
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 470
Capacitancia de salida (Cc), typ, pF: 312
Carga total de la puerta (Qg), typ, nC: 270
Paquete / Cubierta: TO264
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MSG75T120FQW Datasheet (PDF)
msg75t120fqc1 msg75t120fqw.pdf
MSG75T120FQW/C1Features V = 1.85V@V = 15V,I = 75ACE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveformsApplications UPS AC & DC motor controls general purpose inverter .Absolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VceI 115 ACCollector Current-continuous T=25
msg75t120fqw.pdf
MSG75T120FQWFeatures V = 1.85V@V = 15V,I = 75ACE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveformsApplications UPS AC & DC motor controls general purpose inverter .Absolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VceI 115 ACCollector Current-continuous T=25
msg75t65fqc.pdf
MSG75T65FQCN-Channel IGBTFeatures Low gate charge FS Technology Short circuit withstand time 10 uS Saturation voltage:VCE(sat),typ=1.7VApplications General purpose inverter Induction heating(IH) UPSOrder MessageOrder codes Marking PackageMSG75T65FQC MSG75T65FQC TO-247Absolute Ratings(Tc=25)ValueParameter Symbol UnitMSG75T65FQCCollector
msg75t65hhc0.pdf
MSG75T65HHC0N-Channel IGBTFeatures Low gate charge Short circuit withstand time 10 uS Saturation voltage:VCE(sat),typ=1.7VApplications General purpose inverter Induction heating(IH) UPSOrder MessageOrder codes Marking PackageMSG75T65HHC0 MSG75T65HHC0 TO-247Absolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage V 650 Vce
msg75c65hhc0.pdf
MSG75C65HHC0N-Channel IGBTFeatures Low gate charge Trench FS Technology, silicon carbide diode Fast switching speed Low switching losses VCE(sat) with positive temperature coefficient RoHS productApplications Charging pile UPS Solar convertersAbsolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage V 650 Vce
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ