CRG25T120BK3S Todos los transistores

 

CRG25T120BK3S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CRG25T120BK3S
   Tipo de transistor: IGBT + Diode
   Código de marcado: G25T120BK3S
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 278 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 50
   Capacitancia de salida (Cc), typ, pF: 77
   Carga total de la puerta (Qg), typ, nC: 141.2
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de CRG25T120BK3S - IGBT

 

CRG25T120BK3S Datasheet (PDF)

 ..1. Size:936K  crhj
crg25t120bk3s.pdf

CRG25T120BK3S
CRG25T120BK3S

CRG25T120BK3S CRG25T120BK3S VCES 1200 V RoHS IC 25 A Ptot TC=25 278 W VCE(sat) 2.0 V TO-247

 ..2. Size:1231K  wuxi china
crg25t120bk3s.pdf

CRG25T120BK3S
CRG25T120BK3S

Silicon FS Trench IGBT CRG25T120BK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 25 A Stop (FS) technology, offering superior conduction and switching 278 W Ptot TC=25VCE(sat) 2.0 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio

 4.1. Size:784K  wuxi china
crg25t120bnr3s.pdf

CRG25T120BK3S
CRG25T120BK3S

Silicon FS Trench IGBT CRG25T120BNR3S General Description VCES 1200 V Using CRM's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-3PN Features T

 7.1. Size:1157K  wuxi china
crg25t135bkr3s.pdf

CRG25T120BK3S
CRG25T120BK3S

Silicon FS Trench IGBT CRG25T135BKR3S General Description VCES 1350 V Using CRM's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1350V Trench FS Ptot (TC=25) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-247 Features Trench

Otros transistores... MSG30T65FT , MSG30T65FS , MSG30T65FC , MSG40T65FL , MSG50T120FQW , MSG75T120FQC1 , MSG75T120FQW , MSG75T65FQC , SGT50T65FD1PT , CRG40T120AK3S , CRG40T120AK3SD , CRG40T60AN3H , CRG40T60AN3HD , CRG40T60AK3HD , CRG40T65AK5H , CRG40T65AN5H , CRG40T65AK5HD .

 

 
Back to Top

 


CRG25T120BK3S
  CRG25T120BK3S
  CRG25T120BK3S
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: DAZF150G120XCA | DAZF150G120SCA | DAZF100G170XCA | DAZF100G120XCA | DAZF100G120SCA | DAZF075G120XCA | DAZF075G120SCA | DAHF300G120SB | DAHF225G120SB | DAHF200G120SB | DAHF150G120SB

 

 

 
Back to Top