CRG40T60AN3H Todos los transistores

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CRG40T60AN3H CRG40T60AN3H FS IGBT VCES 600 V IC 40 A RoHS Ptot TC=25 280 W VCE(sat) 1.9 V TO-3P N FS VCE(sat

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 crg40t60an3h.pdf

Silicon FS Trench IGBT CRG40T60AN3H General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25 VCE(sat) 1.9 V performances. RoHS Compliant. TO- 3PN Features FS Trench Technology, Positive temperature coefficient Low saturati

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 crg40t60an3hd crg40t60ak3hd.pdf

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 crg40t60ak3sd.pdf

CRG40T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25 VCE(sat) 1.7 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low sat

 5.2. Size:1086K  wuxi china
 crg40t60ak3hd.pdf

Silicon FS Trench IGBT CRG40T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 336 W Ptot TC=25 VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

 5.3. Size:1116K  wuxi china
 crg40t60ak3h.pdf

Silicon FS Trench IGBT CRG40T60AK3H General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25 VCE(sat) 1.9 V performances. RoHS Compliant. TO- 247 Features FS Trench Technology, Positive temperature coefficient Low saturati