CRG40T60AN3H PDF and Equivalents Search

 

CRG40T60AN3H Specs and Replacement

The CRG40T60AN3H is an Insulated Gate Bipolar Transistor designed for high-efficiency power switching applications. It combines the high input impedance of a MOSFET with the low conduction losses of a bipolar transistor, making it suitable for medium- to high-power converters. The device belongs to the 600V voltage class and is intended to handle currents in the tens of amperes range, which allows its use in motor drives, uninterruptible power supplies, welding equipment, industrial inverters. The CRG40T60AN3H offers low saturation voltage and fast switching performance, reducing power losses. The IGBT is co-packaged with an anti-parallel diode, enabling efficient operation in hard-switching topologies. High thermal robustness and predictable switching behavior make this device suitable for reliable industrial power electronics designs.


   Type Designator: CRG40T60AN3H
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 280 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   tr ⓘ - Rise Time, typ: 47.2 nS
   Coesⓘ - Output Capacitance, typ: 141 pF
   Package: TO3PN
 

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CRG40T60AN3H datasheet

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CRG40T60AN3H

CRG40T60AN3H CRG40T60AN3H FS IGBT VCES 600 V IC 40 A RoHS Ptot TC=25 280 W VCE(sat) 1.9 V TO-3P N FS VCE(sat... See More ⇒

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CRG40T60AN3H

Silicon FS Trench IGBT CRG40T60AN3H General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25 VCE(sat) 1.9 V performances. RoHS Compliant. TO- 3PN Features FS Trench Technology, Positive temperature coefficient Low saturati... See More ⇒

 0.1. Size:1182K  crhj
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CRG40T60AN3H

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CRG40T60AN3H

CRG40T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25 VCE(sat) 1.7 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low sat... See More ⇒

Specs: MSG40T65FL , MSG50T120FQW , MSG75T120FQC1 , MSG75T120FQW , MSG75T65FQC , CRG25T120BK3S , CRG40T120AK3S , CRG40T120AK3SD , CRG60T60AN3H , CRG40T60AN3HD , CRG40T60AK3HD , CRG40T65AK5H , CRG40T65AN5H , CRG40T65AK5HD , CRG40T65AN5HD , CRG60T60AK3HD , CRG75T60AK3HD .

Keywords - CRG40T60AN3H transistor spec

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