CRG40T60AK3HD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CRG40T60AK3HD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 336 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 62 nS

Coesⓘ - Capacitancia de salida, typ: 141 pF

Encapsulados: TO247

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CRG40T60AK3HD datasheet

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CRG40T60AK3HD

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CRG40T60AK3HD

Silicon FS Trench IGBT CRG40T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 336 W Ptot TC=25 VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

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CRG40T60AK3HD

Silicon FS Trench IGBT CRG40T60AK3H General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25 VCE(sat) 1.9 V performances. RoHS Compliant. TO- 247 Features FS Trench Technology, Positive temperature coefficient Low saturati

 3.1. Size:998K  wuxi china
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CRG40T60AK3HD

CRG40T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25 VCE(sat) 1.7 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low sat

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