CRGMF100T120FSA3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CRGMF100T120FSA3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 428 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
Tjⓘ - Temperatura máxima de unión: 125 ℃
trⓘ - Tiempo de subida, typ: 70 nS
Coesⓘ - Capacitancia de salida, typ: 572 pF
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CRGMF100T120FSA3 IGBT
CRGMF100T120FSA3 Datasheet (PDF)
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IGBT- CRGMF100T120FSA3IGBT-modules C / Appearance VCES = 1200V IC nom = 100A / ICRM = 200A 34mm / Half Bridge / Features / IGBT High Speed Trench / Field Stop IGBT Low Switching Losses Standard Housing / Applications
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IGBT- CRGMF75T120FSC IGBT-modules / Appearance VCES = 1200V IC nom = 75A / ICRM = 150A 34mm / Half Bridge / Features / IGBT High Speed Trench / Field Stop IGBT Low Switching Losses Standard Housing / Applications
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: DHG20T65D | G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2
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