SPT15N120F1
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPT15N120F1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.9
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6.4
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
Coesⓘ - Capacitancia de salida, typ: 72
pF
Qgⓘ - Carga total de la puerta, typ: 101
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de SPT15N120F1
- IGBT
SPT15N120F1
Datasheet (PDF)
..1. Size:1266K cn sptech
spt15n120f1.pdf 
SPT15N120F11200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High ruggedness, t
0.1. Size:3565K cn sps
spt15n120f1t8tl.pdf
SPT15N120F1T8TL1200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High ruggednes
5.1. Size:9545K cn sps
spt15n120t1t8tl.pdf
SPT15N120T1T8TL1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature s
5.2. Size:1120K cn sptech
spt15n120t1.pdf
SPT15N120T1 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature stab
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