SPT15N120F1
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: SPT15N120F1
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 1200
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
30
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.9
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 6.4
V
Tjⓘ - Максимальная температура перехода:
150
℃
Coesⓘ - Выходная емкость, типовая: 72
pF
Qgⓘ - Общий заряд затвора, typ: 101
nC
Тип корпуса:
TO247
Аналог (замена) для SPT15N120F1
SPT15N120F1
Datasheet (PDF)
..1. Size:1266K cn sptech
spt15n120f1.pdf 
SPT15N120F11200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High ruggedness, t
0.1. Size:3565K cn sps
spt15n120f1t8tl.pdf 
SPT15N120F1T8TL1200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High ruggednes
5.1. Size:9545K cn sps
spt15n120t1t8tl.pdf 
SPT15N120T1T8TL1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature s
5.2. Size:1120K cn sptech
spt15n120t1.pdf 
SPT15N120T1 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature stab
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