SPT25N120T1 Todos los transistores

 

SPT25N120T1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPT25N120T1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 21 nS

Coesⓘ - Capacitancia de salida, typ: 105 pF

Encapsulados: TO247

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SPT25N120T1 datasheet

 ..1. Size:1896K  cn sptech
spt25n120t1.pdf pdf_icon

SPT25N120T1

SPT25N120T1 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10 s Low V CE(SAT) Easy parallel switch

 0.1. Size:5580K  cn sps
spt25n120t1t8tl.pdf pdf_icon

SPT25N120T1

SPT25N120T1T8TL 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10 s Low V CE(SAT) Easy parallel sw

 5.1. Size:5254K  cn sps
spt25n120u1t8tl.pdf pdf_icon

SPT25N120T1

SPT25N120U1T8TL 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due t

 5.2. Size:5495K  cn sps
spt25n120f1.pdf pdf_icon

SPT25N120T1

SPT25N120F1 1200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 20 A C improved reliability V I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable

Otros transistores... CRGMF75T120FSC , SPD15N65T1 , SPT10N120T1 , SPT15N120F1 , SPT15N120T1 , SPT15N65T1 , SPT20N120F1 , SPT25N120F1A1 , RJH30E2DPP , SPT25N120U1 , SPT25N135F1A , SPT40N120 , SPL40N120 , SPT40N120F1A , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 .

History: TA49047 | TA49014 | SRE50N065FSU | YGW40N120F2 | STGWA20M65DF2

 

 

 


History: TA49047 | TA49014 | SRE50N065FSU | YGW40N120F2 | STGWA20M65DF2

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