SPT25N120U1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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SPT25N120U1 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to po

0.1. Size:5254K cn sps
spt25n120u1t8tl.pdf pdf_icon

SPT25N120U1T8TL 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due t

5.1. Size:5495K cn sps
spt25n120f1.pdf pdf_icon

SPT25N120F1 1200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 20 A C improved reliability V I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable

5.2. Size:4778K cn sps
spt25n120f1a1t8tl.pdf pdf_icon

SPT25N120F1A1T8TL 1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V for V 1200 V CE improved reliability I 25 A C Trench-Stop Technology offering High speed switching V I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V CEsat En

5.3. Size:5580K cn sps
spt25n120t1t8tl.pdf pdf_icon

SPT25N120T1T8TL 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10 s Low V CE(SAT) Easy parallel sw

5.4. Size:1545K cn sptech
spt25n120f1a1.pdf pdf_icon

SPT25N120F1A1 1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V for V 1200 V CE improved reliability I 25 A C Trench-Stop Technology offering High speed switching V I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V CEsat Enhanc

5.5. Size:1896K cn sptech
spt25n120t1.pdf pdf_icon

SPT25N120T1 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10 s Low V CE(SAT) Easy parallel switch

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