SPT25N120U1 PDF and Equivalents Search

 

SPT25N120U1 Specs and Replacement

Type Designator: SPT25N120U1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 210 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃

tr ⓘ - Rise Time, typ: 22 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO247

 SPT25N120U1 Substitution

- IGBT ⓘ Cross-Reference Search

 

SPT25N120U1 datasheet

 ..1. Size:1562K  cn sptech
spt25n120u1.pdf pdf_icon

SPT25N120U1

SPT25N120U1 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to po... See More ⇒

 0.1. Size:5254K  cn sps
spt25n120u1t8tl.pdf pdf_icon

SPT25N120U1

SPT25N120U1T8TL 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due t... See More ⇒

 5.1. Size:5495K  cn sps
spt25n120f1.pdf pdf_icon

SPT25N120U1

SPT25N120F1 1200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 20 A C improved reliability V I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable ... See More ⇒

 5.2. Size:4778K  cn sps
spt25n120f1a1t8tl.pdf pdf_icon

SPT25N120U1

SPT25N120F1A1T8TL 1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V for V 1200 V CE improved reliability I 25 A C Trench-Stop Technology offering High speed switching V I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V CEsat En... See More ⇒

Specs: SPD15N65T1 , SPT10N120T1 , SPT15N120F1 , SPT15N120T1 , SPT15N65T1 , SPT20N120F1 , SPT25N120F1A1 , SPT25N120T1 , IKW50N60T , SPT25N135F1A , SPT40N120 , SPL40N120 , SPT40N120F1A , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A .

Keywords - SPT25N120U1 transistor spec

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 SPT25N120U1 equivalent finder
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