All IGBT. SPT25N120U1 Datasheet

 

SPT25N120U1 IGBT. Datasheet pdf. Equivalent


   Type Designator: SPT25N120U1
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 210
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.05
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 22
   Collector Capacity (Cc), typ, pF: 70
   Package: TO247

 SPT25N120U1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPT25N120U1 Datasheet (PDF)

 ..1. Size:1562K  cn sptech
 spt25n120u1.pdf

SPT25N120U1 SPT25N120U1

SPT25N120U11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po

 0.1. Size:5254K  cn sps
 spt25n120u1t8tl.pdf

SPT25N120U1 SPT25N120U1

SPT25N120U1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 5.1. Size:5495K  cn sps
 spt25n120f1.pdf

SPT25N120U1 SPT25N120U1

SPT25N120F11200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 20 A Cimproved reliabilityV I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 5.2. Size:4778K  cn sps
 spt25n120f1a1t8tl.pdf

SPT25N120U1 SPT25N120U1

SPT25N120F1A1T8TL1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat En

 5.3. Size:5580K  cn sps
 spt25n120t1t8tl.pdf

SPT25N120U1 SPT25N120U1

SPT25N120T1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel sw

 5.4. Size:1545K  cn sptech
 spt25n120f1a1.pdf

SPT25N120U1 SPT25N120U1

SPT25N120F1A11200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat Enhanc

 5.5. Size:1896K  cn sptech
 spt25n120t1.pdf

SPT25N120U1 SPT25N120U1

SPT25N120T11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel switch

Datasheet: SPD15N65T1 , SPT10N120T1 , SPT15N120F1 , SPT15N120T1 , SPT15N65T1 , SPT20N120F1 , SPT25N120F1A1 , SPT25N120T1 , YGW40N65F1 , SPT25N135F1A , SPT40N120 , SPL40N120 , SPT40N120F1A , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A .

 

 
Back to Top