IXGA20N60B Todos los transistores

 

IXGA20N60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGA20N60B

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 40

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 100

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO263

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IXGA20N60B Datasheet (PDF)

1.1. ixga20n60b.pdf Size:77K _ixys

IXGA20N60B
IXGA20N60B

IXGA 20N60B VCES = 600 V HiPerFASTTM IGBT IXGP 20N60B IC25 = 40 A VCE(sat)typ = 1.7 V tfi = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C 40 A IC90 TC = 90°C 20 A TO-263 AA (IXGA) ICM TC = 25°C,

3.1. ixga20n250.pdf Size:192K _ixys

IXGA20N60B
IXGA20N60B

Advance Technical Information High Voltage IGBT VCES = 2500V IXGA20N250 IC110 = 12A ≤ VCE(sat) ≤ ≤ 3.1V ≤ ≤ For Capacitor Discharge Applications TO-263 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V E VGES Continuous ± 20 V C (Tab) VGEM Transient ± 30 V IC25 TC = 25°C 30 A G = Gate C = Coll

3.2. ixga20n120a3.pdf Size:234K _ixys

IXGA20N60B
IXGA20N60B

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 ≤ VCE(sat) ≤ ≤ 2.5V ≤ IXGH20N120A3 ≤ Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G

 3.3. ixga20n120b3 ixgp20n120b3.pdf Size:212K _ixys

IXGA20N60B
IXGA20N60B

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA20N120B3 IC90 = 20A IXGP20N120B3 ≤ VCE(sat) ≤ ≤ 3.1V ≤ ≤ High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E C (TAB) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V TO-220 (IXGP) VGES Continuous ±20 V VGEM Trans

3.4. ixga20n100 ixgp20n100.pdf Size:111K _ixys

IXGA20N60B
IXGA20N60B

VCES = 1000 V IXGA 20N100 IGBT IC25 = 40 A IXGP 20N100 VCE(sat) = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TO-220AB (IXGP) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V G C E IC25 TC = 25°C40 A IC90 TC = 90°C20 A ICM TC = 25°C, 1 ms 80 A TO-263 AA (IXGA) SSOA VGE = 15

 3.5. ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf Size:236K _ixys

IXGA20N60B
IXGA20N60B

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 ≤ VCE(sat) ≤ ≤ 2.5V ≤ IXGH20N120A3 ≤ Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G

3.6. ixga20n250hv.pdf Size:195K _ixys

IXGA20N60B
IXGA20N60B

Preliminary Technical Information High Voltage IGBT VCES = 2500V IXGA20N250HV IC110 = 12A ≤ VCE(sat) ≤ ≤ 3.1V ≤ ≤ For Capacitor Discharge Applications TO-263 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V E VGES Continuous ± 20 V C (Tab) VGEM Transient ± 30 V IC25 TC = 25°C 30 A G = Gate C

3.7. ixga20n100a3.pdf Size:220K _ixys

IXGA20N60B
IXGA20N60B

Advance Technical Information VCES = 1000V GenX3TM 1000V IXGA20N100A3 IC90 = 20A IGBTs IXGP20N100A3 ≤ VCE(sat) ≤ ≤ 2.3V ≤ IXGH20N100A3 ≤ Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXGP) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1000 V VGES Continuous ±20 V

3.8. ixga20n120.pdf Size:69K _ixys

IXGA20N60B
IXGA20N60B

VCES = 1200 V IXGA 20N120 IGBT IC25 = 40 A IXGP 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G C E VGEM Transient ±30 V IC25 TC = 25°C40 A IC90 TC = 90°C20 A TO-263 AA (IXGA) ICM TC = 25°C, 1 ms 80 A SSOA VGE = 15 V, T

3.9. ixga20n120b3.pdf Size:210K _ixys

IXGA20N60B
IXGA20N60B

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA20N120B3 IC90 = 20A IXGP20N120B3 ≤ VCE(sat) ≤ ≤ 3.1V ≤ ≤ High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E C (TAB) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V TO-220 (IXGP) VGES Continuous ±20 V VGEM Trans

3.10. ixga20n120 ixgp20n120.pdf Size:71K _ixys

IXGA20N60B
IXGA20N60B

VCES = 1200 V IXGA 20N120 IGBT IC25 = 40 A IXGP 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G C E VGEM Transient ±30 V IC25 TC = 25°C40 A IC90 TC = 90°C20 A TO-263 AA (IXGA) ICM TC = 25°C, 1 ms 80 A SSOA VGE = 15 V, T

3.11. ixga20n100.pdf Size:110K _ixys

IXGA20N60B
IXGA20N60B

VCES = 1000 V IXGA 20N100 IGBT IC25 = 40 A IXGP 20N100 VCE(sat) = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TO-220AB (IXGP) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V G C E IC25 TC = 25°C40 A IC90 TC = 90°C20 A ICM TC = 25°C, 1 ms 80 A TO-263 AA (IXGA) SSOA VGE = 15

Otros transistores... IXGA12N100AU1 , IXGA12N100U1 , IXGA12N60C , IXGA12N60CD1 , IXGA15N100C , IXGA15N120B , IXGA15N120C , IXGA20N100 , 10N50E1D , IXGA7N60B , IXGA7N60C , IXGA8N100 , IXGD10N100 , IXGD10N60 , IXGD10N60A , IXGD17N100 , IXGD20N60A .

 

 
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