IXGA20N60B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGA20N60B  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 35 nS

Coesⓘ - Capacitancia de salida, typ: 175 pF

Encapsulados: TO263

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IXGA20N60B datasheet

 ..1. Size:77K  ixys
 ixga20n60b.pdf pdf_icon

IXGA20N60B

IXGA 20N60B VCES = 600 V HiPerFASTTM IGBT IXGP 20N60B IC25 = 40 A VCE(sat)typ = 1.7 V tfi = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C 40 A IC90 TC = 90 C 20 A TO-263 AA (IXGA) ICM TC = 25 C,

 7.1. Size:69K  ixys
 ixga20n120.pdf pdf_icon

IXGA20N60B

VCES = 1200 V IXGA 20N120 IGBT IC25 = 40 A IXGP 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-263 AA (IXGA) ICM TC = 25 C, 1 ms 80 A SSOA VGE = 15 V, T

 7.2. Size:192K  ixys
 ixga20n250.pdf pdf_icon

IXGA20N60B

Advance Technical Information High Voltage IGBT VCES = 2500V IXGA20N250 IC110 = 12A VCE(sat) 3.1V For Capacitor Discharge Applications TO-263 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 2500 V G VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V E VGES Continuous 20 V C (Tab) VGEM Transient 30 V IC25 TC = 25 C 30 A G = Gate C = Coll

 7.3. Size:234K  ixys
 ixga20n120a3.pdf pdf_icon

IXGA20N60B

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 VCE(sat) 2.5V IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G

MOSTRAR MÁS

Otros transistores... IXGA12N100AU1, IXGA12N100U1, IXGA12N60C, IXGA12N60CD1, IXGA15N100C, IXGA15N120B, IXGA15N120C, IXGA20N100, TGPF30N43P, IXGA7N60B, IXGA7N60C, IXGA8N100, IXGH32N60AU1S, IXGH40N30AS, IXGH40N30BS, IXGH50N60AS, IXGT32N60B