IXGA20N60B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGA20N60B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.7
V @25℃
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 35
nS
Coesⓘ - Capacitancia de salida, typ: 175
pF
Paquete / Cubierta:
TO263
Búsqueda de reemplazo de IXGA20N60B IGBT
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Selección ⓘ de transistores por parámetros
Principales características: IXGA20N60B
..1. Size:77K ixys
ixga20n60b.pdf 
IXGA 20N60B VCES = 600 V HiPerFASTTM IGBT IXGP 20N60B IC25 = 40 A VCE(sat)typ = 1.7 V tfi = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C 40 A IC90 TC = 90 C 20 A TO-263 AA (IXGA) ICM TC = 25 C,
7.1. Size:69K ixys
ixga20n120.pdf
VCES = 1200 V IXGA 20N120 IGBT IC25 = 40 A IXGP 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-263 AA (IXGA) ICM TC = 25 C, 1 ms 80 A SSOA VGE = 15 V, T
7.2. Size:192K ixys
ixga20n250.pdf
Advance Technical Information High Voltage IGBT VCES = 2500V IXGA20N250 IC110 = 12A VCE(sat) 3.1V For Capacitor Discharge Applications TO-263 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 2500 V G VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V E VGES Continuous 20 V C (Tab) VGEM Transient 30 V IC25 TC = 25 C 30 A G = Gate C = Coll
7.3. Size:234K ixys
ixga20n120a3.pdf
VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 VCE(sat) 2.5V IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G
7.4. Size:220K ixys
ixga20n100a3.pdf
Advance Technical Information VCES = 1000V GenX3TM 1000V IXGA20N100A3 IC90 = 20A IGBTs IXGP20N100A3 VCE(sat) 2.3V IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXGP) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C, RGE = 1M 1000 V VGES Continuous 20 V
7.5. Size:210K ixys
ixga20n120b3.pdf
Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA20N120B3 IC90 = 20A IXGP20N120B3 VCE(sat) 3.1V High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E C (TAB) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V TO-220 (IXGP) VGES Continuous 20 V VGEM Trans
7.6. Size:236K ixys
ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf
VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 VCE(sat) 2.5V IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G
7.7. Size:195K ixys
ixga20n250hv.pdf
Preliminary Technical Information High Voltage IGBT VCES = 2500V IXGA20N250HV IC110 = 12A VCE(sat) 3.1V For Capacitor Discharge Applications TO-263 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 2500 V G VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V E VGES Continuous 20 V C (Tab) VGEM Transient 30 V IC25 TC = 25 C 30 A G = Gate C
7.8. Size:111K ixys
ixga20n100 ixgp20n100.pdf
VCES = 1000 V IXGA 20N100 IGBT IC25 = 40 A IXGP 20N100 VCE(sat) = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A TO-263 AA (IXGA) SSOA VGE = 15
7.9. Size:110K ixys
ixga20n100.pdf
VCES = 1000 V IXGA 20N100 IGBT IC25 = 40 A IXGP 20N100 VCE(sat) = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A TO-263 AA (IXGA) SSOA VGE = 15
7.10. Size:212K ixys
ixga20n120b3 ixgp20n120b3.pdf
Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA20N120B3 IC90 = 20A IXGP20N120B3 VCE(sat) 3.1V High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E C (TAB) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V TO-220 (IXGP) VGES Continuous 20 V VGEM Trans
7.11. Size:71K ixys
ixga20n120 ixgp20n120.pdf
VCES = 1200 V IXGA 20N120 IGBT IC25 = 40 A IXGP 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-263 AA (IXGA) ICM TC = 25 C, 1 ms 80 A SSOA VGE = 15 V, T
Otros transistores... IXGA12N100AU1
, IXGA12N100U1
, IXGA12N60C
, IXGA12N60CD1
, IXGA15N100C
, IXGA15N120B
, IXGA15N120C
, IXGA20N100
, IXRH40N120
, IXGA7N60B
, IXGA7N60C
, IXGA8N100
, IXGH32N60AU1S
, IXGH40N30AS
, IXGH40N30BS
, IXGH50N60AS
, IXGT32N60B
.
