IXGA20N60B - параметры транзистора, его аналоги, Даташиты

IXGA20N60B - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

   Наименование: IXGA20N60B
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 35 nS
   Coesⓘ - Выходная емкость, типовая: 175 pF
   Qgⓘ - Общий заряд затвора, typ: 90 nC
   Тип корпуса: TO263

Аналог (замена) для IXGA20N60B

IXGA20N60B Datasheet (PDF)

..1. Size:77K ixys
ixga20n60b.pdf

IXGA 20N60B VCES = 600 VHiPerFASTTM IGBTIXGP 20N60B IC25 = 40 AVCE(sat)typ = 1.7 Vtfi = 100 nsPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C 40 AIC90 TC = 90C 20 ATO-263 AA (IXGA)ICM TC = 25C,

7.1. Size:69K ixys
ixga20n120.pdf

VCES = 1200 VIXGA 20N120IGBTIC25 = 40 AIXGP 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C40 AIC90 TC = 90C20 ATO-263 AA (IXGA)ICM TC = 25C, 1 ms 80 ASSOA VGE = 15 V, T

7.2. Size:192K ixys
ixga20n250.pdf

Advance Technical InformationHigh Voltage IGBT VCES = 2500VIXGA20N250IC110 = 12AVCE(sat) 3.1VFor Capacitor DischargeApplicationsTO-263Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VGVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 20 VC (Tab)VGEM Transient 30 VIC25 TC = 25C 30 AG = Gate C = Coll

7.3. Size:234K ixys
ixga20n120a3.pdf

VCES = 1200VGenX3TM 1200V IGBTs IXGA20N120A3IC110 = 20AIXGP20N120A3VCE(sat) 2.5VIXGH20N120A3 Ultra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VG

7.4. Size:220K ixys
ixga20n100a3.pdf

Advance Technical InformationVCES = 1000VGenX3TM 1000V IXGA20N100A3IC90 = 20AIGBTs IXGP20N100A3VCE(sat) 2.3VIXGH20N100A3 Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingTO-263 (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C, RGE = 1M 1000 VVGES Continuous 20 V

7.5. Size:210K ixys
ixga20n120b3.pdf

Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBTIXGA20N120B3IC90 = 20AIXGP20N120B3VCE(sat) 3.1VHigh Speed Low Vsat PTIGBTs 3-20 kHz SwitchingTO-263 (IXGA)GSymbol Test Conditions Maximum RatingsEC (TAB)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VTO-220 (IXGP)VGES Continuous 20 VVGEM Trans

7.6. Size:236K ixys
ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf

7.7. Size:195K ixys
ixga20n250hv.pdf

Preliminary Technical InformationHigh Voltage IGBT VCES = 2500VIXGA20N250HVIC110 = 12AVCE(sat) 3.1VFor Capacitor DischargeApplicationsTO-263Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VGVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 20 VC (Tab)VGEM Transient 30 VIC25 TC = 25C 30 AG = Gate C

7.8. Size:111K ixys
ixga20n100 ixgp20n100.pdf

VCES = 1000 VIXGA 20N100IGBTIC25 = 40 AIXGP 20N100VCE(sat) = 3.0 VPreliminary Data SheetSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C40 AIC90 TC = 90C20 AICM TC = 25C, 1 ms 80 ATO-263 AA (IXGA)SSOA VGE = 15

7.9. Size:110K ixys
ixga20n100.pdf