SPT25N135F1A Todos los transistores

 ..1. Size:1676K  cn sptech
 spt25n135f1a.pdf

SPT25N135F1A 1350V /25A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1350 V CE switching losses, high energy efficiency and I 25 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) C microwave oven, etc. FEATURES High breakdown voltage to 1350V for improved reliability Trench-Stop Technol

 0.1. Size:5360K  cn sps
 spt25n135f1at8tl.pdf

SPT25N135F1AT8TL 1350V /25A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1350 V CE switching losses, high energy efficiency and I 25 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) C microwave oven, etc. FEATURES High breakdown voltage to 1350V for improved reliability Trench-Stop Tec

 7.1. Size:5254K  cn sps
 spt25n120u1t8tl.pdf

SPT25N120U1T8TL 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due t

 7.2. Size:5495K  cn sps
 spt25n120f1.pdf

SPT25N120F1 1200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 20 A C improved reliability V I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable

 7.3. Size:4778K  cn sps
 spt25n120f1a1t8tl.pdf

SPT25N120F1A1T8TL 1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V for V 1200 V CE improved reliability I 25 A C Trench-Stop Technology offering High speed switching V I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V CEsat En

 7.4. Size:5580K  cn sps
 spt25n120t1t8tl.pdf

SPT25N120T1T8TL 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10 s Low V CE(SAT) Easy parallel sw

 7.5. Size:1545K  cn sptech
 spt25n120f1a1.pdf

SPT25N120F1A1 1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V for V 1200 V CE improved reliability I 25 A C Trench-Stop Technology offering High speed switching V I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V CEsat Enhanc

 7.6. Size:1562K  cn sptech
 spt25n120u1.pdf

SPT25N120U1 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to po

 7.7. Size:1896K  cn sptech
 spt25n120t1.pdf

SPT25N120T1 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10 s Low V CE(SAT) Easy parallel switch