SPT25N135F1A IGBT. Datasheet pdf. Equivalent
Type Designator: SPT25N135F1A
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Collector-Emitter Voltage |Vce|, V: 1350
Maximum Collector Current |Ic| @25℃, A: 50
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
Maximum Junction Temperature (Tj), ℃: 150
Collector Capacity (Cc), typ, pF: 70
Total Gate Charge (Qg), typ, nC: 125
Package: TO247
SPT25N135F1A Transistor Equivalent Substitute - IGBT Cross-Reference Search
SPT25N135F1A Datasheet (PDF)
spt25n135f1a.pdf
SPT25N135F1A1350V /25A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1350 V CEswitching losses, high energy efficiency and I 25 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) Cmicrowave oven, etc. FEATURES High breakdown voltage to 1350V forimproved reliability Trench-Stop Technol
spt25n135f1at8tl.pdf
SPT25N135F1AT8TL1350V /25A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1350 V CEswitching losses, high energy efficiency and I 25 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) Cmicrowave oven, etc. FEATURES High breakdown voltage to 1350V forimproved reliability Trench-Stop Tec
spt25n120u1t8tl.pdf
SPT25N120U1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet
spt25n120f1.pdf
SPT25N120F11200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 20 A Cimproved reliabilityV I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable
spt25n120f1a1t8tl.pdf
SPT25N120F1A1T8TL1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat En
spt25n120t1t8tl.pdf
SPT25N120T1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel sw
spt25n120f1a1.pdf
SPT25N120F1A11200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat Enhanc
spt25n120u1.pdf
SPT25N120U11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po
spt25n120t1.pdf
SPT25N120T11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel switch
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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