All IGBT. SPT25N135F1A Datasheet

 

SPT25N135F1A IGBT. Datasheet pdf. Equivalent


   Type Designator: SPT25N135F1A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 70 pF
   Qgⓘ - Total Gate Charge, typ: 125 nC
   Package: TO247

 SPT25N135F1A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPT25N135F1A Datasheet (PDF)

 ..1. Size:1676K  cn sptech
spt25n135f1a.pdf

SPT25N135F1A
SPT25N135F1A

SPT25N135F1A1350V /25A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1350 V CEswitching losses, high energy efficiency and I 25 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) Cmicrowave oven, etc. FEATURES High breakdown voltage to 1350V forimproved reliability Trench-Stop Technol

 0.1. Size:5360K  cn sps
spt25n135f1at8tl.pdf

SPT25N135F1A
SPT25N135F1A

SPT25N135F1AT8TL1350V /25A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1350 V CEswitching losses, high energy efficiency and I 25 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) Cmicrowave oven, etc. FEATURES High breakdown voltage to 1350V forimproved reliability Trench-Stop Tec

 7.1. Size:5254K  cn sps
spt25n120u1t8tl.pdf

SPT25N135F1A
SPT25N135F1A

SPT25N120U1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 7.2. Size:5495K  cn sps
spt25n120f1.pdf

SPT25N135F1A
SPT25N135F1A

SPT25N120F11200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 20 A Cimproved reliabilityV I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 7.3. Size:4778K  cn sps
spt25n120f1a1t8tl.pdf

SPT25N135F1A
SPT25N135F1A

SPT25N120F1A1T8TL1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat En

 7.4. Size:5580K  cn sps
spt25n120t1t8tl.pdf

SPT25N135F1A
SPT25N135F1A

SPT25N120T1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel sw

 7.5. Size:1545K  cn sptech
spt25n120f1a1.pdf

SPT25N135F1A
SPT25N135F1A

SPT25N120F1A11200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat Enhanc

 7.6. Size:1562K  cn sptech
spt25n120u1.pdf

SPT25N135F1A
SPT25N135F1A

SPT25N120U11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po

 7.7. Size:1896K  cn sptech
spt25n120t1.pdf

SPT25N135F1A
SPT25N135F1A

SPT25N120T11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel switch

Datasheet: SPT10N120T1 , SPT15N120F1 , SPT15N120T1 , SPT15N65T1 , SPT20N120F1 , SPT25N120F1A1 , SPT25N120T1 , SPT25N120U1 , IKW30N60H3 , SPT40N120 , SPL40N120 , SPT40N120F1A , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 .

 

 
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